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Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high…

计算物理 · 物理学 2025-01-08 Sirsendu Ghosh , Anamika Devi Laishram , Pramod Kumar

The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession…

介观与纳米尺度物理 · 物理学 2007-05-23 Liangbin Hu , Ju Gao , Shun-Qing Shen

We report the pressure study of a doped organic superconductor with Hall coefficient and conductivity measurements. We find that maximally enhanced superconductivity and a non-Fermi liquid appear around a certain pressure where mobile…

材料科学 · 物理学 2025-01-07 H. Oike , K. Miyagawa , H. Taniguchi , K. Kanoda

Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric field induced control of charge carrier concentration in order to modulate the channel superconducting…

介观与纳米尺度物理 · 物理学 2019-02-21 Federico Paolucci , Giorgio De Simoni , Elia Strambini , Paolo Solinas , Francesco Giazotto

Research on conjugated polymers for thermoelectric applications has made tremendous progress in recent years, which is accompanied by surging interest in molecular doping as a means to achieve the high electrical conductivities that are…

We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type…

介观与纳米尺度物理 · 物理学 2015-03-12 Dohun Kim , Paul Syers , Nicholas P. Butch , Johnpierre Paglione , Michael S. Fuhrer

Using a recently proposed Ginzburg-Landau-like lattice free energy functional due to Banerjee et al. Phys. Rev. B 83, 024510 (2011) we calculate the fluctuation diamagnetism of high-Tc superconductors as a function of doping, magnetic field…

超导电性 · 物理学 2015-12-15 Kingshuk Sarkar , Sumilan Banerjee , Subroto Mukerjee , T. V. Ramakrishnan

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

强关联电子 · 物理学 2009-10-30 Dragana Popovic , A. B. Fowler , S. Washburn

Active thermal management requires advances in thermal switching materials, whose thermal conductivity responds to external stimuli. The electric field, as one of the most convenient and effective stimuli, has shown great potential in…

The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…

超导电性 · 物理学 2009-11-10 S. Wehrli , C. Helm

We describe here a novel approach to the subject of thermoelectric devices. The current best thermoelectrics are based on heavily doped semiconductors or semimetal alloys. We show that utilization of electric field effect or ferroelectric…

凝聚态物理 · 物理学 2007-05-23 V. Sandomirsky , A. V. Butenko , R. Levin , Y. Schlesinger

Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…

介观与纳米尺度物理 · 物理学 2024-12-31 Giuseppe Lovarelli , Fabrizio Mazziotti , Demetrio Logoteta , Giuseppe Iannaccone

Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum…

We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in…

介观与纳米尺度物理 · 物理学 2015-05-08 S. Das Sarma , E. H. Hwang , S. Kodiyalam , L. N. Pfeiffer , K. W. West

Heterosubstrates have been extensively studied as a method to improve the heat dissipation of Ga$_{2}$O$_{3}$ devices. In this simulation work, we propose a novel role for $p$-type available heterosubstrates, as a component of a reduced…

应用物理 · 物理学 2024-01-19 Junting Chen , Junlei Zhao , Jin Wei , Mengyuan Hua

Transport properties of a series of poly(3-hexylthiophene) organic field effect transistors with Cr, Cu and Au source/drain electrodes were examined over a broad temperature range. The current-voltage characteristics of the injecting…

无序系统与神经网络 · 物理学 2007-05-23 B. H. Hamadani , D. Natelson

High-temperature superconductors at zero doping can be considered strongly correlated two-dimensional Mott insulators. The understanding of the connection between the superconductor and the Mott insulator hits at the heart of the…

强关联电子 · 物理学 2009-05-30 M. Civelli

Magnetoelectric (ME) magnetic field sensors commonly rely on one of the two modulation principles: the nonlinear dependence of magnetostrictive strain on the applied field or the stress-induced change in magnetization susceptibility. While…

Recent studies demonstrate that novel 2D triphosphides semiconductors possess high carrier mobility and promising thermoelectric performance, while the carrier transport behaviors in 2D semimetal triphosphides have never been elucidated…

材料科学 · 物理学 2023-08-09 Yongchao Rao , C. Y. Zhao , Lei Shen , Shenghong Ju

Doping Bi2Sr2Ca1Cu2O8+y with Co causes a superconductor-insulator transition. We study correlations between changes in the electrical resistivity RHOab(T) and the electronic bandstructure using identical single crystalline samples. For…

凝聚态物理 · 物理学 2009-10-22 C. Quitmann , P. Almeras , Jian Ma , R. J. Kelley , H. Berger , G. Margaritondo , M. Onellion