相关论文: Improving the doping efficiency of Al in 4H-SiC by…
In this study, we explore lithium-doped stable molecular hydrogen structures by performing first-principles crystal structure searches across varying compositions in the Li-H system under high pressure. Our search reveals a cubic phase of…
We demonstrate simultaneous quantisation of conduction band (CB) and valence band (VB) states in silicon using ultra-shallow, high density, phosphorus doping profiles (so-called Si:P $\delta$-layers). We show that, in addition to the well…
The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1 and 3% atomic…
Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance…
In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron…
Conventional models of planar and bulk heterojunction organic solar cells have been extended by introducing doping in the active layer. We have studied the performance of organic solar cells as a function of dopant concentration. For bulk…
Phase change materials based on Ge-Sb-Te alloys are widely explored for their potential in both memory devices and thermoelectric applications. In this study, films of Ge2Sb2Te5 (GST) doped with varying concentrations of Pb were prepared…
We report the effects of Al-doping on the structure and magnetic properties in CaBa(Co$_{1-x}$Al$_{x}$)$_4$O$_7$ (0$\leq$x$\leq$0.25). The system exhibits a structural transition from an orthorhombic symmetry to a hexagonal symmetry when…
Cubic boron arsenide (BAs) stands out as a promising material for advanced electronics, thanks to its exceptional thermal conductivity and ambipolar mobility. However, effective control of p- and n-type doping in BAs poses a significant…
Silicon Carbide device (4H-SiC) has potential radiation hardness, high saturated carrier velocity and low temperature sensitivity theoretically. The Silicon Low Gain Avalanche Diode (LGAD) has been verified to have excellent time…
Insulator to metal (IMT) transition (T$_t$ $\sim$ 341 K) in the VO2 accompanies transition from an infrared (IR) transparent to IR opaque phase. Tailoring of the IMT and associated IR switching behavior can offer potential thermochromic…
We have systematically grown large single crystals of layered compound beta-PdBi2, both the hole-doped PdBi2-xPbx and the electron-doped NaxPdBi2, and studied their magnetic and transport properties. Hall-effect measurement on PdBi2,…
The structural, magnetic and transport properties have been studied of Li doped CoV2O4 and FeV2O4. Li doping increases the ferri-magnetic ordering temperature of both the samples but decreases the spin-glass transition temperature of…
A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the…
We present the effects of lead doping on the thermoelectric properties of Tellurium Telluride, prepared by solid state reactions in an evacuated sealed silica tubes. Structurally, all these compounds were found to be phase pure as confirmed…
We report a first-principles study of the energetics of hydrogen absorption and desorption (i.e. H-vacancy formation) on pure and Ti-doped sodium alanate (NaAlH4) surfaces. We find that the Ti atom facilitates the dissociation of H2…
We report a strategy to induce superconductivity in the BiS$_2$-based compound LaOBiS$_2$. Instead of substituting F for O, we increase the charge-carrier density (electron dope) via substitution of tetravalent Th$^{+4}$, Hf$^{+4}$,…
The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show…
We report the thermoelectric properties (Seebeck coefficient, thermal conductivity, and electrical resistivity) of lightly doped single crystals of (001)-oriented SrTiO3 (STO). Hall effect measurements show that electron doping around 10^-5…
Magnetic interaction with the gapless surface states in topological insulator (TI) has been predicted to give rise to a few exotic quantum phenomena. However, the effective magnetic doping of TI is still challenging in experiment. Using…