相关论文: Improving the doping efficiency of Al in 4H-SiC by…

The effects of isovalent doping on the superconducting transition temperature Tc in novel 112-type iron arsenide Ca1-xLaxFeAs2 were studied by conducting measurements of electrical resistivity rho and magnetization M. P or Sb doping…

It has been observed that impurity doping and/or ion-beam-induced damage in high $T_{c}$ superconductors cause a metal-insulator transition and thereby suppress the critical temperature. Based on our recent theory of the weak localization…

Semiconducting single-walled carbon nanotubes (SWCNTs) are a promising thermoelectric material with high power factors after chemical p- or n-doping. Understanding the impact of dopant counterions on charge transport and thermoelectric…

We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and…

We investigate the spin-orbit coupling (SOC) effects on the electronic structures and semi-classic transport coefficients of half-Heusler $\mathrm{ANiB}$ (A=Ti, Hf, Sc, Y; B=Sn, Sb, Bi) by using generalized gradient approximation (GGA).…

Controllable doping in AlN and its alloys is essential for deep-ultraviolet light sources. Ionization energies for donors in AlN ($\mathrm{Si_{Al}}$, $\mathrm{S_N}$, $\mathrm{Se_N}$) are high. We report first-principles calculations…

Copper and Nickel impurities have been doped into the iron pnictide superconductor Ba0.6K0.4Fe2As2. Resistivity measurements reveal that Cu and Ni impurities suppress superconducting transition temperature T_c with rates of \Delta T_c/Cu-1%…

Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in…

We report the effect of carbon doping in Ti-stabilized nonstoichiometric molybdenum diboride (Mo$_{0.96}$Ti$_{0.04}$)$_{0.8}$B$_{2}$, which exhibits bulk superconductivity below $T_{\rm c}$ = 7.0 K. It is found that…

Irradiation with 1.4 GeV $^{208}$Pb ions was used to induce artificial disorder in single crystals of iron-arsenide superconductor Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ and to study its effect on the temperature-dependent London penetration depth…

Historically, the discovery and optimization of doped bulk materials has been predominantly developed through an Edisonian approach. While successful and despite the constant progress in fundamental understanding of detector materials…

The silicon vacancy ($V_{Si}$) in 4H-SiC at its cubic site (V2-center) has shown significant promise for quantum technologies, due to coherent spin states, the mature material system, and stable optical emission. In these SiC-based…

Diamond and many newly emerged semiconductor materials show outstanding optical and magnetic properties. However, they cannot be as efficiently doped as silicon or gallium arsenide, which limits their practical applicability. Here, we…

The polymer (PBDTTT-c) p-doped with the molecular dopant (Mo(tfd-COCF3)3) exhibits a decline in transport properties at high doping concentrations, which limits the performance attainable through organic semiconductor doping. Scanning…

High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an…

Atomic force microscopy and second-harmonic generation data show that boron doping enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the reactivity of the Si-H up bonds than that of the Si-Si back…

Half-Heusler compounds with 18 valence electrons are semi-conducting. It will be shown that doping with electrons results in half-metallic ferromagnets, similar to the case of diluted semi-conductors. CoTiSb is known to be a semi-conducting…

Fluorite CeO$_2$ doped with group IV elements is studied within the DFT and DFT+U framework. Concentration dependent formation energies are calculated for Ce$_{1-x}$Z$_x$O$_2$ (Z= C, Si, Ge, Sn, Pb, Ti, Zr, Hf) with $0\leq x \leq 0.25$ and…

In the iron-based high-Tc bulk superconductors, Tc above 50K was only observed in the electron-doped 1111-type compounds. Here we revisit the electron-doped SmFeAsO polycrystals to make a further investigation for the highest T-c in these…

In amorphous materials, acceptor and donor impurities rarely dope the system (shift the Fermi level). We find out why in a-Si:H. We report simulations on B and P doping of a-Si:H and a-Si. We analyze the Electronic Density of States (EDOS)…