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Nanofluidic memristive devices work with nanoscale pores and ions dissolved in water, which harness the ionic memory effect aiming to store and process information. These devices share the same charge carriers as biological systems and…

Oxide-based Random Access Memory (OxRAM), is part of the larger family of Resistive RAM (RRAM) memories. Generally OxRAM cells consist of a transition metal oxide (typically HfO2, Ta2O5, TiO2) sandwiched between two metal electrodes…

新兴技术 · 计算机科学 2018-10-25 Georgi Gorine

The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consumption of artificial intelligence (AI). Multiple works have…

Phase change memory (PCM) devices are known to reduce in power consumption as the bit volume and contact area of their electrodes are scaled down. Here, we demonstrate two types of low-power PCM devices with lateral graphene ribbon…

Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have…

神经与进化计算 · 计算机科学 2017-11-13 Gopalakrishnan Srinivasan , Parami Wijesinghe , Syed Shakib Sarwar , Akhilesh Jaiswal , Kaushik Roy

The proliferation of large language models (LLMs) is accelerating the integration of multimodal assistants into edge devices, where inference is executed under stringent latency and energy constraints, often exacerbated by intermittent…

硬件体系结构 · 计算机科学 2026-01-29 Yanru Chen , Runyang Tian , Yue Pan , Zheyu Li , Weihong Xu , Tajana Rosing

Analog in-memory computing is an emerging paradigm designed to efficiently accelerate deep neural network workloads. Recent advancements have focused on either inference or training acceleration. However, a unified analog in-memory…

The brain performs intelligent tasks with extremely low energy consumption. This work takes inspiration from two strategies used by the brain to achieve this energy efficiency: the absence of separation between computing and memory…

On-chip learning in a crossbar array based analog hardware Neural Network (NN) has been shown to have major advantages in terms of speed and energy compared to training NN on a traditional computer. However analog hardware NN proposals and…

神经与进化计算 · 计算机科学 2019-07-02 Nilabjo Dey , Janak Sharda , Utkarsh Saxena , Divya Kaushik , Utkarsh Singh , Debanjan Bhowmik

A potential application of two-dimensional (2D) MXenes, such as Ti2CTx and Ti3C2Tx, is energy storage devices, such as supercapacitors, batteries, and hydride electrochemical cells, where intercalation of ions between the 2D layers is…

材料科学 · 物理学 2023-06-13 Lars-Åke Näslund , Martin Magnuson

The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…

材料科学 · 物理学 2016-11-15 Ella Gale

Analog in-memory computing (AIMC) accelerators enable efficient deep neural network computation directly within memory using resistive crossbar arrays, where model parameters are represented by the conductance states of memristive devices.…

机器学习 · 计算机科学 2025-10-06 Jindan Li , Zhaoxian Wu , Gaowen Liu , Tayfun Gokmen , Tianyi Chen

In this paper, we develop an in-memory analog computing (IMAC) architecture realizing both synaptic behavior and activation functions within non-volatile memory arrays. Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM)…

硬件体系结构 · 计算机科学 2021-09-15 Mohammed Elbtity , Abhishek Singh , Brendan Reidy , Xiaochen Guo , Ramtin Zand

In-memory computing (IMC) utilizing synaptic crossbar arrays is promising for energy-efficient deep neural network (DNN) accelerators. Various technologies (CMOS and post-CMOS) have been explored as synaptic device candidates, each with its…

新兴技术 · 计算机科学 2024-08-15 Chunguang Wang , Jeffry Victor , Sumeet K. Gupta

Processing-in-memory (PIM) architectures have demonstrated great potential in accelerating numerous deep learning tasks. Particularly, resistive random-access memory (RRAM) devices provide a promising hardware substrate to build PIM…

硬件体系结构 · 计算机科学 2022-02-01 Weidong Cao , Yilong Zhao , Adith Boloor , Yinhe Han , Xuan Zhang , Li Jiang

Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large…

The continuous shift of computational bottlenecks to the memory access and data transfer, especially for AI applications, poses the urgent needs of re-engineering the computer architecture fundamentals. Many edge computing applications,…

系统与控制 · 电气工程与系统科学 2025-01-31 Georgios Papandroulidakis , Shady Agwa , Ahmet Cirakoglu , Themis Prodromakis

Metal carbides, nitrides, or carbonitrides of early transition metals, better known as MXenes, possess notable structural, electrical, and magnetic properties. Analyzing electronic structures by calculating structural stability, band…

The Convolutional Neural Network (CNN) has emerged as a powerful and versatile tool for artificial intelligence (AI) applications. Conventional computing architectures face challenges in meeting the demanding processing requirements of…

硬件体系结构 · 计算机科学 2024-02-08 Ali Sedaghatgoo , Amir M. Hajisadeghi , Mahmoud Momtazpour , Nader Bagherzadeh

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

新兴技术 · 计算机科学 2024-07-08 Simranjeet Singh , Farhad Merchant , Sachin Patkar