相关论文: Analytical description of the 1s exciton linewidth…
Monolayer transition metal dichalcogenides feature Coulomb-bound electron-hole pairs (excitons) with exceptionally large binding energy and coupled spin and valley degrees of freedom. These unique attributes have been leveraged for…
Embedding a monolayer of a transition metal dichalcogenide in a high-Q optical cavity results in the formation of distinct exciton polariton modes. The polaritons are affected by the strong exciton-phonon interaction in the monolayer. We…
Temperature influences the performance of two-dimensional materials in optoelectronic devices. Indeed, the optical characterization of these materials is usually realized at room temperature. Nevertheless most {\it ab-initio} studies are…
A fully microscopic model of the doping-dependent exciton and trion line widths in the absorption spectra of monolayer transition metal dichalcogenides in the low temperature and low doping regime is explored. The approach is based on…
In this paper we study the phonon's effect on the position of the 1s excitonic resonance of the fundamental absorption transition line in two-dimensional transition metal dichalcogenides. We apply our theory to WS$_{2}$a two-dimensional…
Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the…
Two-dimensional transition metal dichalcogenides (TMDs) offer tunable optical and electronic properties, making them highly promising for next-generation optoelectronic devices. One effective approach to engineering these properties is…
Monolayer Transition Metal Dichalcogenides (TMDS) are highly luminescent materials despite being sub-nanometer thick due to the ultra-short ($<1$ ps) radiative lifetime of the strongly bound bright excitons hosted by these materials. The…
The photoluminescence spectra of band-edge transitions in GaN is studied as a function of temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy and the broadening of emission line…
Using an equation of motion (EOM) approach, we calculate excitonic properties of monolayer transition metal dichalcogenides (TMDs) perturbed by an external magnetic field. We compare our findings to the widely used Wannier model for…
Perovskites have attracted much attention due to their remarkable optical properties. While it is well established that excitons dominate their optical response, the impact of higher excitonic states and formation of phonon sidebands in…
Several monolayer transition metal dichalcogenides (TMDs) are direct band gap semiconductors and potentially efficient emitters in light emitting devices. Photons are emitted when strongly bound excitons decay radiatively, and accurate…
Optical properties of transition metal dichalcogenides monolayers are controlled by the Wannier-Mott excitons forming a series of $1s$, $2s$, $2p$,... hydrogen-like states. We develop the theory of the excited excitonic states energy…
We have studied the nature of excitons in the transition metal dichalcogenide alloy Mo0.6W0.4 S2, compared to pure MoS2 and WS2 grown by atomic layer deposition (ALD). For this, optical absorption/transmission spectroscopy and…
In this paper, we study the third-order nonlinear optical response due to transitions between excitonic levels in two-dimensional transition metal dichalcogeniedes. To accomplish this, we use methods not applied to the description of…
Monolayer 2D semiconductors, such as WS2, exhibit uniquely strong light-matter interactions due to exciton resonances that enable atomically-thin optical elements. Similar to geometry-dependent plasmon and Mie resonances, these intrinsic…
Exciton intervalley scattering, annihilation and relaxation dynamics, and diffusive transport in a monolayer transition metal dichalcogenides are central to the functionality of devices based on them. This motivated us to investigate these…
Janus transition-metal dichalcogenide monolayers are fully artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to…
We report on linewidth analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 $\mu$eV is observed at hole tunneling…
Enhanced Coulomb interactions in monolayer transition metal dichalcogenides cause tightly bound electron-hole pairs (excitons) which dominate their linear and nonlinear optical response. The latter includes bleaching, energy…