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The coupled spin-valley physics in transition metal dichalcogenides (TMDs) endows exciton states with valley degrees of freedom, making them promising for valleytronic applications in TMDs monolayers and/or their heterostructures. Although…

应用物理 · 物理学 2022-12-07 Yingying Chen , Zeyi Liu , Junchao Hu , Junze Li , Wendian Yao , Dehui Li

Exciton transport is fundamental for understanding transport phenomena in bosonic systems and for exploring excitation energy transfer in materials. Spatially indirect excitons (IXs) are composed of electrons and holes in separated layers.…

介观与纳米尺度物理 · 物理学 2025-09-16 Zhiwen Zhou , W. J. Brunner , E. A. Szwed , H. Henstridge , L. H. Fowler-Gerace , L. V. Butov

Photoexcited intralayer excitons in van der Waals heterostructures (vdWHs) with type-II band alignment have been observed to tunnel into interlayer excitons on ultrafast timescales. Such interlayer excitons have sufficiently long lifetimes…

介观与纳米尺度物理 · 物理学 2020-04-02 Høgni C. Kamban , Thomas G. Pedersen

Vertical heterostructures (HS) of transition metal dichalcogenides (TMDs) host interlayer excitons (ILX), with electrons and holes residing in different layers. With respect to their intralayer counterparts, ILX feature much longer…

Exciton binding energies of hundreds of meV and strong light absorption in the optical frequency range make transition metal dichalcogenides (TMDs) promising for novel optoelectronic nanodevices. In particular, atomically thin TMDs can be…

介观与纳米尺度物理 · 物理学 2018-04-24 Simon Ovesen , Samuel Brem , Christopher Linderälv , Mikael Kuisma , Paul Erhart , Malte Selig , Ermin Malic

The control of elastic and inelastic electron tunneling relies on materials with well defined interfaces. Van der Waals materials made of two-dimensional constituents form an ideal platform for such studies. Signatures of acoustic phonons…

Monolayers of semiconducting transition metal dichalcogenides exhibit intriguing fundamental physics of strongly coupled spin and valley degrees of freedom for charge carriers. While the possibility of exploiting these properties for…

Two dimensional (2D) van der Waals heterostructures from transition metal dichalcogenide (TMDC) semiconductors show a new class of spatially separate excitons with extraordinary properties. The interlayer excitons (XI) have been studied…

材料科学 · 物理学 2021-03-02 Jaehoon Ji , Jong Hyun Choi

Van der Waals heterostructures of two-dimensional transition metal dichalcogenides provide a unique platform to engineer optoelectronic devices tuning their optical properties via stacking, twisting, or straining. Using ab initio Many-Body…

介观与纳米尺度物理 · 物理学 2025-03-21 R. Reho , A. R. Botello-Méndez , D. Sangalli , M. J. Verstraete , Zeila Zanolli

An emerging class of semiconductor heterostructures involves stacking discrete monolayers such as the transition metal dichalcogenides (TMDs) to form van der Waals heterostructures. In these structures, it is possible to create interlayer…

Van der Waals materials and heterostructures manifesting strongly bound room temperature exciton states exhibit emergent physical phenomena and are of a great promise for optoelectronic applications. Here, we demonstrate that nanostructured…

Trapped interlayer excitons (IXs) in MoSe2-WSe2 heterobilayers have generated interest for use as single quantum emitter arrays and as an opportunity to study moir\'e physics in transition metal dichalcogenide (TMD) heterostructures. IXs…

Interlayer excitons (IXs) in hetero-bilayers of transition metal dichalcogenides (TMDs) represent an exciting emergent class of long-lived dipolar composite bosons in an atomically thin, near-ideal two-dimensional (2D) system. The…

The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…

介观与纳米尺度物理 · 物理学 2016-09-06 Oriol Lopez Sanchez , Dmitry Ovchinnikov , Shikhar Misra , Adrien Allain , Andras Kis

Van der Waals heterostructures usually formed using atomic thin transition metal dichalcogenides (TMDCs) with a direct bandgap in the near-infrared to the visible range are promising candidates for low-dimensional optoelectronic…

介观与纳米尺度物理 · 物理学 2018-09-21 Guanghui Cheng , Baikui Li , Chunyu Zhao , Xin Yan , Hong Wang , Kei May Lau , Jiannong Wang

Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an…

van der Waals heterostructures consisting of transition metal dichalcogenides (TMDs) and two-dimensional (2D) magnets offer a versatile platform to study the coexistence and transformation of different excitons. By focusing on TMD WSe$_2$…

材料科学 · 物理学 2025-09-29 Mushir Thodika , Dimitar Pashov , Igor Zutic , Mark van Schilfgaarde , Swagata Acharya

Controlling interlayer excitons in van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies,…

介观与纳米尺度物理 · 物理学 2024-04-09 Lifu Zhang , Ruihao Ni , Liuxin Gu , Ming Xie , Suji Park , Houk Jang , Takashi Taniguchi , Kenji Watanabe , You Zhou

We investigate excitons in stacked transition metal dichalcogenide (TMDC) layers under perpendicularly applied electric field, herein MoSe$_2$/WSe$_2$ van der Waals heterostructures. Band structures are obtained with density functional…

介观与纳米尺度物理 · 物理学 2018-09-19 A. Chaves , J. G. Azadani , V. Ongun Özçelik , R. Grassi , T. Low

Van der Waals (vdW) materials exhibit a variety of states that can be switched with low power at low temperatures, offering a viable cryogenic "flash memory" required for the classical control electronics for solid-state quantum information…