相关论文: A Generalized Tunneling Current Formula for Metal/…
Herein, the canonical Fowler-Nordheim theory is extended by computing the zero-temperature transmission probability for the more general case of a barrier described by a fractional power law. An exact analytical formula is derived, written…
In this work we investigate a generalized tunneling barrier for planar emitters at zero-temperature. We present the evidence of the emergence of a non-Fowler-Nordheim-type general behavior for the field emission current density in the case…
During the previous decade, K.L. Jensen et. al. developed a general analytical model that successfully describes electron emission from metals both in the field and thermionic regimes, as well as in the transition region. In that…
The Simmons model is a well-known and widely used model for the elastic tunneling current of a metallic tunnel junction, and fitting it to electrical measurements can be used to estimate thicknesses and heights of the tunnel barriers. We…
We study the thermal transport in magnetic tunnel junctions. Thermal gradients across the tunneling barrier appear around the Fowler-Nordheim tunneling regime, due to the current-induced heat caused by quantum interference. Both…
In this work, an analytic model is proposed which provides in a continuous manner the current-voltage characteristic (I-V) of high performance tunneling field-effect transistors (TFETs) based on direct bandgap semiconductors. The model…
The traditional transmission coefficient present in the original Landauer formulation, which is valid for quasi-static scenarios with working frequencies below the inverse of the electron transit time, is substituted by a novel…
{Analytical equations like Richardson-Dushman's or Shockley's provided a general, if simplified conceptual background, which was widely accepted in conventional electronics and made a fundamental contribution to advances in the field. In…
The Planar Model of the Electrode-Vacuum-Electrode configuration for STM in which electrode surfaces are assumed to be infinite parallel planes, with atomic size separation and vacuum between them, is used to calculate tunneling current…
Tunneling between a photo-excited p-type silicon tip and a gold surface is studied as a function of tip bias, tip/sample distance and light intensity. In order to extend the range of application of future spin injection experiments, the…
Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at $\nu_T=1$ are reported. The maximum, or critical current for tunneling at $\nu_T=1$, is shown to be a well-defined global property of the coherent…
We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…
We calculate the tunneling conductance spectra of a normal-metal/insulator/triplet superconductor using the Blonder-Tinkham-Klapwijk (BTK) formulation. Possible states for the superconductor are considered with horizontal lines of nodes,…
Tunneling conductance in diffusive normal metal / insulator / s-wave superconductor (DN/I/S) junctions is calculated for various situations by changing the magnitudes of the resistance and Thouless energy in DN and the transparency of the…
Electron transport through fully depleted ferroelectric tunnel barriers sandwiched between two metal electrodes and its dependence on ferroelectric polarization direction are investigated. The model assumes a polarization direction…
CMOS-compatible HfO2-based ferroelectric tunnel junction (FTJ) has attracted significant attention as a promising candidate for in-memory computing (IMC) due to its extremely low power consumption. However, conventional FTJs face inherent…
We have successfully fabricated Cu/AlOx-Al/Nb normal-metal/insulator/superconductor tunnel junction devices with a high value of the superconducting gap (up to $\sim 1$ mV), using electron-beam lithography and angle evaporation techniques…
We present radio-frequency thermometry based on a tunnel junction between a superconductor and proximitized normal metal. It allows operation in a wide range of biasing conditions. We demonstrate that the standard finite-bias quasiparticle…
We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and…
Within the framework of the scattering matrix formalism the nonlinear Kubo theory for electron transport in the metal with a tunnel barrier has been considered. A general expression for the mean electrical current was obtained. It…