相关论文: Cryogenic GaAs high-electron-mobility-transistor a…

The fundamental limits of the microwave noise performance of high electron mobility transistors (HEMTs) are of scientific and practical interest for applications in radio astronomy and quantum computing. Self-heating at cryogenic…

Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the…

We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of…

We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and…

The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K.…

The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We observed that an InP HEMT 0.3-14GHz LNA at 2K,…

To search for dark matter candidates with masses below $\mathcal{O}$(MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic…

Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this…

We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board…

The SPLENDOR Collaboration studies novel narrow-gap semiconductors and engineered a substrate agnostic detector platform to achieve $\mathcal{O}$(meV) energy sensitivity designed for low mass dark matter searches. This was achieved using…

A vacuum compatible cryogenic accelerometer is presented which will reach $<0.5$ p$g$ Hz$^{-1/2}$ sensitivity from 1 mHz to 10 Hz with a maximum sensitivity of 10 f$g$ Hz$^{-1/2}$ around 10 Hz. This figure can be translated to a…

In this study, we present the design and analysis of a Low Noise Amplifier tailored specifically for quantum applications. We selected the HEMT for its unique noise reduction properties, crucial for quantum engineering. The main goal is to…

We have designed and characterized a cryogenic amplifier for use in $^3$He NMR spectrometry. The amplifier, with a power consumption of $\sim 2.5$ mW, works at temperatures down to 4~K. It has a hi-impedance input for measuring a signal…

GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a wide bandgap and higher critical field strength compared to…

An electron-on-helium qubit is a promising physical platform for quantum information technologies. Among all the "blueprints" for the qubit realization, a hybrid Rydberg-spin qubit seems to be a promising one towards quantum computing using…

The axion search experiments based on haloscopes at the Center for Axion and Precision Physics Research (CAPP) of the Institute for Basic Science (IBS) in South Korea are performed in the frequency range from 1 GHz to 6 GHz. In order to…

We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages…

Most microwave readout architectures in quantum computing or sensing rely on a semiconductor amplifier at 4 K, typically a high-electron mobility transistor (HEMT). Despite its remarkable noise performance, a conventional HEMT dissipates…

We propose a new type of cryogenic current amplifiers, in which low-frequency power spectrum of current can be measured through a measurement of microwave response of a superconducting resonant circuit shunted by a series array of Josephson…

We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs High-Electron-Mobility Transistors (HEMTs). We integrate this circuit…