相关论文: Huge permittivity and premature metallicity in Bi$…
High-mobility layered semiconductors have the potential to enable the next-generation electronics and computing. This paper demonstrates that the ultrahigh electron mobility observed in the layered semiconductor Bi$_2$O$_2$Se originates…
Bi2O2Se belongs to a group of quasi-2D semiconductors that can replace silicon in future high-speed/low-power electronics. However, the correlation between crystal/band structure and other physical properties still eludes understanding:…
Thermoelectric materials allow the direct conversion of waste heat into electricity, and novel materials are being investigated for this purpose. Recently, doped Bi$_2$O$_2$Se has shown high application potential. In this study, we discuss…
Bismuth oxyselenide (Bi$_2$O$_2$Se) attracts great interest as a potential n-type complement to p-type thermoelectric oxides in practical applications. Previous investigations were generally focused on polycrystals. Here, we performed a…
The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently…
Previous investigations of 4$H_b$-TaS$_{2-2x}$Se$_{2x}$ mainly focused on the direct competition between superconductivity and charge density wave (CDW). However, the superconductivity itself, although has been prominently enhanced by…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
The single crystal VO2, exihibiting a first-order metal-insulator transition (MIT) at 67.2 degrees C and an insulator-insulator transition (IIT) at ~49.7 degrees C, is grown. From synchrotron-based x-ray microdiffraction analysis, the IIT…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
The quasi-one-dimensional (q1D) material Rb$_2$Mo$_6$Se$_6$ has been proposed to display a nontrivial combination of low-dimensional fluctuations and a dynamical charge density wave (CDW) at ambient pressure. This may lead to a progressive…
We argue on the basis of experimental numbers that the B=0 metal-insulator transition in two dimensions, observed in Si-MOSFETs and in other two-dimensional systems, is likely to be due to a few strongly interacting electrons, which also…
Topological insulators are known to their metallic surface states, a result of strong-spin-orbital coupling, that show unique surface transport phenomenon. But these surface transports are buried in presence of metallic bulk conduction. We…
Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a…
In this letter, we report growth and characterization of bulk Bi2Se3 single crystals. The studied Bi2Se3 crystals are grown by self flux method through solid state reaction from high temperature (950C) melt of constituent elements and slow…
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…
The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on…
Measurements on resistivity and magnetic susceptibility have been carried out for Bi single crystals under pressures up to 10.5GPa. The temperature dependent resistivity shows a semimetallic behavior at ambient and low pressures (below…
We successfully grew the high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs) by self-flux method. Sharp superconducting transition was observed for both types of crystals. The crystals show the onset superconducting…
Here, we have identified the monolayer phase of Bi2O2Se as a promising two-dimensional semiconductor with ultra-high carrier mobility and giant electric polarization. Due to the strong reconstruction originated from the interlayer…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…