相关论文: $N$-band Hopf insulator
In topological phases of matter for which the bulk and boundary support distinct electronic gaps, there exists the possibility of decoupled mobility gaps in the presence of disorder. This is in analogy with the well-studied problem of…
We have analyzed the effects of the anisotropic energy bands of phosphorene on magnetoroton branches for electrons and holes in the two Landau levels close to the band edges. We have found that the fractional quantum Hall effect gap in the…
We show that the interplay of a high density two-dimensional electron gas and localized electrons in a neighboring Mott insulator leads to kinetic magnetism unique to the Mott/band insulator interface. Our study is based upon a bilayer…
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in…
A topological insulator is characterized by a dichotomy between the interior and the edge of a finite system: While the bulk has a non-zero energy gap, the edges are forced to sustain excitations traversing these gaps. Originally proposed…
In this paper, we studied a generalized Bose-Hubbard model on a checkerboard lattice with topologically nontrivial flat-band. We used mean-field method to decouple the model Hamiltonian and obtained phase diagram by Landau theory of…
We study the influence of an in-plane magnetic field and Coulomb interactions on the physics of quantum spin Hall insulators, like those in InAs/GaSb and HgTe/CdTe quantum wells. Using a Hartree-Fock mean-field theory approximation, we…
In Kondo insulators the many-body Kondo lattice effect drives the formation of bands containing heavy charge carriers with a hybridization gap, leading to insulating properties. These renormalized bands can host non-trivial topologies…
The two-band Hubbard model with the density of states obtained from the band calculation is applied for FeSi, which is suggested to be a Kondo insulator or a correlated band insulator. Using this model, the correlation effects on FeSi are…
Quantum wells in InAs/GaSb heterostructures can be tuned to a topological regime associated with the quantum spin Hall effect, which arises due to an inverted band gap and hybridized electron and hole states. Here, we investigate…
We investigate the strong correlation effect in the spinless electron-hole two-band Hubbard model using the dynamical mean-field theory. At half filling, both the renormalization factor $Z$ and the number of conduction electrons (valence…
We study the electronic structure of the doped paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model. Throughout we use the moderately high temperature T=0.33t, where the spin correlation…
The conductance of a point contact between two hopping insulators is expected to be dominated by the individual localized states in its vicinity. Here we study the additional effects due to an external magnetic field. Combined with the…
The ground-state properties of the two-dimensional Hubbard model with nearest-neighbor and next-nearest-neighbor hoppings at half filling are studied by the path-integral-renormalization-group method. The nonmagnetic-insulator phase…
We investigate the electrostatic effects in doped topological insulators by developing a self consistent scheme for an interacting tight binding model. The presence of bulk carriers, in addition to surface electrons, generates an intrinsic…
With the inclusion of arbitrary long-range hopping and (pseudo)spin-orbit coupling amplitudes, we formulate a generic model that can describe any two-dimensional two-band bulk insulators, thus providing a simple framework to investigate…
The classic Thouless-Kohmoto-Nightingale-Nijs theorem dictates that a single electron band of a lattice can only harbor an integer quantum Hall conductance as a multiple of e^2/2h, while recent studies have pointed to the emergence of half…
Negative longitudinal magnetoresistance, in the presence of an external magnetic field parallel to the direction of an applied current, has recently been experimentally verified in Weyl semimetals and topological insulators in the bulk…
The surface states of the three dimensional (3D) Topological Insulators are described by two-dimensional (2D) massless dirac equation. A gate voltage induced one dimensional potential barrier on such surface creates a discrete bound state…
Topological insulators exhibit boundary states protected by bulk band topology, a principle first established in quantum systems and later extended to classical waves, including phononics. Conventionally, an $n$-dimensional bulk with…