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相关论文: Abelian parton state for the $\nu=4/11$ fractional…

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Fascinating structures have arisen from the study of the fractional quantum Hall effect (FQHE) at the even denominator fraction of $5/2$. We consider the FQHE at another even denominator fraction, namely $\nu=2+3/8$, where a well-developed…

强关联电子 · 物理学 2022-04-12 Ajit C. Balram

We consider the fractional quantum Hall effect at the filling $\nu=6/17$, where experiments have observed features of incompressibility in the form of a minimum in the longitudinal resistance. We propose a parton state denoted as…

强关联电子 · 物理学 2021-07-26 Ajit C. Balram , A. Wójs

We consider the fractional quantum Hall effect (FQHE) at the filling factor $8/17$, where signatures of incompressibility have been observed in the zeroth Landau level of bilayer graphene. We propose an Abelian state described by the…

强关联电子 · 物理学 2024-08-27 Ajit C. Balram , Nicolas Regnault

We consider a non-Abelian candidate state at filling factor $\nu=3/7$ state belonging to the parton family. We find that, in the second Landau level of GaAs (i.e. at filling factor $\nu=2+3/7$), this state is energetically superior to the…

强关联电子 · 物理学 2020-08-19 W. N. Faugno , J. K. Jain , Ajit C. Balram

We investigate the ground state properties of fractional quantum Hall effect at the filling factor $\nu=2/3$ and $2+2/3$, with a special focus on their typical edge physics. Via topological characterization scheme in the framework of…

强关联电子 · 物理学 2022-05-04 Liangdong Hu , W. Zhu

The fractional quantum Hall effect (FQHE) in the second Landau level (SLL) likely stabilizes non-Abelian topological orders. Recently, a parton sequence has been proposed to capture many of the fractions observed in the SLL [Ajit C. Balram,…

强关联电子 · 物理学 2023-06-12 Koyena Bose , Ajit C. Balram

In this letter, we discuss the recently proposed fractional quantum Hall effect in the absence of Landau levels. It is shown that the parton construction can explain all properties of 1/3 state, including the effective charge of…

强关联电子 · 物理学 2011-05-03 Abolhassan Vaezi

The unexpected appearance of a fractional quantum Hall effect (FQHE) plateau at $\nu=2+6/13$~ [Kumar \emph{et al.}, Phys. Rev. Lett. {\bf 105}, 246808 (2010)] offers a clue into the physical mechanism of the FQHE in the second Landau level…

强关联电子 · 物理学 2018-11-05 Ajit C. Balram , Sutirtha Mukherjee , Kwon Park , Maissam Barkeshli , Mark S. Rudner , J. K. Jain

Motivated by two independent experiments revealing a resistance minimum at the Landau level (LL) filling factor $\nu=2+4/9$, characteristic of the fractional quantum Hall effect (FQHE) and suggesting electron condensation into a yet unknown…

强关联电子 · 物理学 2020-08-19 Ajit C. Balram , A. Wójs

In this work we propose a parton state as a candidate state to describe the fractional quantum Hall effect in the half-filled second Landau level. The wave function for this parton state is $\mathcal{P}_{\rm LLL}…

强关联电子 · 物理学 2018-07-19 Ajit C. Balram , Maissam Barkeshli , Mark S. Rudner

Extensive fractional quantum Hall effect (FQHE) has been observed in graphene-based materials. Some of the observed fractions are anomalous in that FQHE has not been established at these fractions in conventional GaAs systems. One such…

强关联电子 · 物理学 2022-06-09 Rakesh K. Dora , Ajit C. Balram

We generalize the fractional quantum Hall hierarchy picture to apply to arbitrary, possibly non-Abelian, fractional quantum Hall states. Applying this to the nu = 5/2 Moore-Read state, we construct new explicit trial wavefunctions to…

介观与纳米尺度物理 · 物理学 2008-09-29 Parsa Bonderson , J. K. Slingerland

The fractional quantum Hall effect, where plateaus in the Hall resistance at values of coexist with zeros in the longitudinal resistance, results from electron correlations in two dimensions under a strong magnetic field. Current flows…

介观与纳米尺度物理 · 物理学 2015-05-13 M. Dolev , M. Heiblum , V. Umansky , Ady Stern , D. Mahalu

The fractional quantum Hall effect at $\nu=2+3/8$, which has been definitively observed, is one of the last fractions for which no viable explanation has so far been demonstrated. Our detailed study suggests that it belongs to a new class…

介观与纳米尺度物理 · 物理学 2017-03-08 Jimmy A. Hutasoit , Ajit C. Balram , Sutirtha Mukherjee , Ying-Hai Wu , Sudhansu S. Mandal , A. Wojs , Vadim Cheianov , J. K. Jain

We construct an algebraic description for the ground state and for the static response of the quantum Hall plateaux with filling factor $\nu=N/(2N+1)$ in the large $N$ limit. By analyzing the algebra of the fluctuations of the shape of the…

强关联电子 · 物理学 2018-12-26 Dung Xuan Nguyen , Dam Thanh Son

Fractional quantum Hall states have been observed at filling factor $\nu=3/4$ in GaAs hole system and bilayer graphene. In theoretical bootstrap analysis, it was revealed that non-Abelian topological orders with Ising anyons can be realized…

强关联电子 · 物理学 2026-02-24 Kai-Wen Huang , Ying-Hai Wu

An important development in the field of the fractional quantum Hall effect has been the proposal that the 5/2 state observed in the Landau level with orbital index $n = 1$ of two dimensional electrons in a GaAs quantum well originates from…

介观与纳米尺度物理 · 物理学 2019-10-25 Youngwook Kim , Ajit C. Balram , Takashi Taniguchi , Kenji Watanabe , Jainendra K. Jain , Jurgen H. Smet

We study the $\nu={\pm}1/2$ fractional quantum Hall states in graphene observed by Zibrov et al. [Nat. Phys. 14, 930 (2018)]. The parton construction is employed to provide a valley unpolarized trial wave function for these states. The…

强关联电子 · 物理学 2022-10-19 Ying-Hai Wu

An anyon wave function (characterized by the statistical factor $n$) projected onto the lowest Landau level is derived for the fractional quantum Hall effect states at filling factor $\nu = n/(2pn+1)$ ($p$ and $n$ are integers). We study…

介观与纳米尺度物理 · 物理学 2009-11-11 O. Ciftja , G. Japaridze , X. Q. Wang

We report the observation of developing fractional quantum Hall states at Landau level filling factors $\nu = 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The…

介观与纳米尺度物理 · 物理学 2015-05-14 J. Shabani , T. Gokmen , Y. T. Chiu , M. Shayegan
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