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In this paper, we briefly review the concept of memory circuit elements, namely memristors, memcapacitors and meminductors, and then discuss some applications by focusing mainly on the first class. We present several examples, their…

介观与纳米尺度物理 · 物理学 2011-09-29 Y. V. Pershin , J. Martinez-Rincon , M. Di Ventra

Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…

介观与纳米尺度物理 · 物理学 2021-08-11 K. S. Denisov , K. A. Baryshnikov , P. S. Alekseev , N. S. Averkiev

The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…

材料科学 · 物理学 2016-11-15 Ella Gale

A complete and harmonized fundamental circuit relational graph with four linear and four memory elements is constructed based on newly defined elements, which provides a guide to developing novel circuit functionalities in the future. In…

介观与纳米尺度物理 · 物理学 2015-08-18 Dashan Shang , Yisheng Chai , Zexian Cao , Jun Lu , Young Sun

We suggest circuit realizations of emulators transforming memristive devices into effective floating memcapacitive and meminductive systems. The emulator's circuits are based on second generation current conveyors and involve either four…

仪器与探测器 · 物理学 2011-07-13 Yuriy V. Pershin , Massimiliano Di Ventra

Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tuneable conductivity properties enable the imitation of synaptic behaviour. Multipore nanofluidic memristors have shown their…

应用物理 · 物理学 2024-09-17 Agustin Bou , Patricio Ramirez , Juan Bisquert

Recording reliably extracellular neural activities isan essential prerequisite for the development of bioelectronicsand neuroprosthetic applications. Recently, a fully differential,2-stage, integrating pre-amplifier was proposed for…

Memristive devices represent a promising technology for building neuromorphic electronic systems. In addition to their compactness and non-volatility features, they are characterized by computationally relevant physical properties, such as…

新兴技术 · 计算机科学 2018-07-18 Melika Payvand , Manu V Nair , Lorenz K. Muller , Giacomo Indiveri

We propose a two terminal nanomagnetic memory element based on magnetization reversal of a perpendicularly magnetized nanomagnet employing a unipolar voltage pulse that modifies the perpendicular anisotropy of the system. Our work…

介观与纳米尺度物理 · 物理学 2018-06-04 Dhritiman Bhattacharya , Jayasimha Atulasimha

Mimicking the collective excitatory and inhibitory behaviors of biological neurons remains a critical challenge in the development of neuromorphic computing systems that rival the complexity and performance of the human brain. Volatile…

Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…

介观与纳米尺度物理 · 物理学 2015-04-08 V. K. Sangwan , D. Jariwala , I. S. Kim , K. -S. Chen , T. J. Marks , L. J. Lauhon , M. C. Hersam

A combination of the memory function formalism and time-dependent density-functional theory is applied to transport in dilute magnetic semiconductors. The approach considers spin and charge disorder and electron-electron interaction on an…

材料科学 · 物理学 2007-05-23 F. V. Kyrychenko , C. A. Ullrich

Memristive materials are related to neuromorphic applications as they can combine information processing with memory storage in a single computational element, just as biological neurons. Many of these bioinspired materials emulate the…

Memristive devices hold promise to improve the scale and efficiency of machine learning and neuromorphic hardware, thanks to their compact size, low power consumption, and the ability to perform matrix multiplications in constant time.…

新兴技术 · 计算机科学 2024-08-14 Zhenming Yu , Ming-Jay Yang , Jan Finkbeiner , Sebastian Siegel , John Paul Strachan , Emre Neftci

The memristor, because of its controllability over a wide dynamic range of resistance, has emerged as a promising device for data storage and analog computation. A major challenge is the accurate measurement of memristance over a wide…

新兴技术 · 计算机科学 2022-05-18 Lijie Xie , Jiawei Shen , Andrea Mifsud , Chaohan Wang , Abdulaziz Alshaya , Christos Papavassiliou

Memristors have attracted interest as neuromorphic computation elements because they show promise in enabling efficient hardware implementations of artificial neurons and synapses. We performed measurements on interface-type memristors to…

新兴技术 · 计算机科学 2021-01-07 Thomas F. Tiotto , Anouk S. Goossens , Jelmer P. Borst , Tamalika Banerjee , Niels A. Taatgen

Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous…

Memristive associative learning has gained significant attention for its ability to mimic fundamental biological learning mechanisms while maintaining system simplicity. In this work, we introduce a high-order memristive associative…

神经与进化计算 · 计算机科学 2024-10-23 Shengbo Wang , Xuemeng Li , Jialin Ding , Weihao Ma , Ying Wang , Luigi Occhipinti , Arokia Nathan , Shuo Gao

Memristors are nonlinear passive circuit elements which can be thought as time varying resistances. When connected in a complex circuit these exhibit very exotic behavior, typical of disordered systems, such as a universal slow relaxation…

适应与自组织系统 · 物理学 2017-12-22 Francesco Caravelli

Neuromorphic in-memory computing requires area-efficient architecture for seamless and low latency parallel processing of large volumes of data. Here, we report a compact, vertically integrated/stratified field-effect transistor (VSFET)…