相关论文: Valley effects on the fractions in an ultrahigh mo…

We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few…

We report low temperature magnetotransport measurements on a high mobility (\mu=325,000 cm^2/V sec) 2D electron system on a H-terminated Si(111) surface. While low magnetic field data indicate a six-fold valley degenerate system, we observe…

Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si_0.75Ge_0.25/Si/Si_0.75Ge_0.25 heterostructure, at temperatures down to 30mK and in magnetic fields…

We use Pseudo Quantum Electrodynamics to study massive (2+1)D Dirac systems interacting electromagnetically via a U(1) gauge field in (3+1)D. It was recently found in Ref. [1], that an interaction-induced Quantum Hall Effect (QHE) and…

In an ideal two-component two-dimensional electron system, particle-hole symmetry dictates that the fractional quantum Hall states around $\nu = 1/2$ are equivalent to those around $\nu = 3/2$. We demonstrate that composite fermions (CFs)…

We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau…

We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes almost 100% modulation of the Shubnikov de Haas oscillations…

In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do…

Interactions among electrons can give rise to striking collective phenomena when the kinetic energy of charge carriers is suppressed. One example is the fractional quantum Hall effect, in which correlations between electrons moving in two…

The particle-hole (PH) symmetry of {\em electrons} is an exact symmetry of the electronic Hamiltonian confined to a specific Landau level, and its interplay with the formation of composite fermions has attracted much attention of late. This…

We have investigated the valley splitting of two-dimensional electrons in high quality Si/Si$_{1-x}$Ge$_x$ heterostructures under tilted magnetic fields. For all the samples in our study, the valley splitting at filling factor $\nu=3$…

We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by…

We study a two-dimensional electron system where the electrons occupy two conduction band valleys with anisotropic Fermi contours and strain-tunable occupation. We observe persistent quantum Hall states at filling factors $\nu = 1/3$ and…

Almost all quantum Hall effect to date can be understood as {\em integral} quantum Hall effect of appropriate particles, namely electrons or composite fermions. This paper investigates theoretically the feasibility of nested states of…

While the integer quantum Hall effect of composite fermions manifests as the prominent fractional quantum Hall effect (FQHE) of electrons, the FQHE of composite fermions produces further, more delicate states, arising from a weak residual…

Using several independent methods, we find that the metal-insulator transition occurs in the strongly-interacting two-valley two-dimensional electron system in ultra-high mobility SiGe/Si/SiGe quantum wells in zero magnetic field. The…

The quantum Hall effect in ultra-high mobility GaAs/AlGaAs has been measured and plateaus are found at many different fractions. The resistivity is quantized as \rho =h/ie^2 where i exhibits many different values. The fractions 5/3, 8/5,…

We have realized an AlAs two-dimensional electron system in which electrons occupy conduction-band valleys with different Fermi contours and effective masses. In the quantum Hall regime, we observe both resistivity spikes and persistent…

Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top…

Unconventional features of relativistic Dirac/Weyl quasi-particles in topological materials are most evidently manifested in the 2D quantum Hall effect (QHE), whose variety is further enriched by their spin and/or valley polarization.…