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Cubic boron nitride (cBN) is an ultra-wide bandgap, super-hard material with potential for extreme-temperature and -pressure applications. A proof-of-principle p-n junction using cBN was demonstrated almost three decades ago. However, to…

The resistivity, magnetoresistance, and magnetic susceptibility are measured in single crystals of FeTe0.65Se0.35 with Cu, Ni, and Co substitutions for Fe. The crystals are grown by Bridgman's method. The resistivity measurements show that…

超导电性 · 物理学 2023-07-19 V. L. Bezusyy , D. J. Gawryluk , M. Berkowski , M. Z. Cieplak

We report the effect of adipic acid (C6H10O4) doping on lattice parameters, microstructure, critical temperature (Tc), current density (Jc), and irreversibility field (Hirr) for MgB2 superconductor. Actual carbon (C) substitution level for…

超导电性 · 物理学 2012-01-25 Arpita Vajpayee , V. P. S. Awana , G. L. Bhalla , A. K. Nigam , H. Kishan

Cubic boron arsenide (BAs) stands out as a promising material for advanced electronics, thanks to its exceptional thermal conductivity and ambipolar mobility. However, effective control of p- and n-type doping in BAs poses a significant…

材料科学 · 物理学 2024-11-12 Shuxiang Zhou , Zilong Hua , Kaustubh K. Bawane , Hao Zhou , Tianli Feng

The crystal structure of boron doped superconducting MgC_{1-x}{11}^B_{x}Ni_{3}, studied by powder neutron diffraction, is reported. The solubility limit of boron is determined to be approximately x=0.16. The unit cell expands from a =…

超导电性 · 物理学 2009-11-10 T. Klimczuk , M. Avdeev , J. D. Jorgensen , R. J. Cava

This study systematically investigates the effects of Ge, Ga, and Al doping on the mechanical and electronic properties of cubic Cr$_3$Si using first-principles density functional theory (DFT). Doping increases lattice constants from 4.50…

材料科学 · 物理学 2025-03-04 Siavash Karbasizadeh , Mohammad Amirabbasi

We study within a first-principle approach the band structure, vibrational modes and electron-phonon coupling in boron, aluminum and phosphorus doped silicon in the diamond phase. Our results provide evidences that the recently discovered…

超导电性 · 物理学 2007-05-23 E. Bourgeois , X. Blase

The effect of doping with Ti, Ta, SiC in complex with synthesis temperature on the amount and distribution of structural inhomogeneities in MgB2 matrix of high-pressuresynthesized-materials (2 GPa) which can influence pining: higher borides…

The effect of doping in Si3N4 membranes on the secondary electron yield is investigated using Monte Carlo simulations of the electron-matter interactions. The effect of the doping level of silicon doping and the effect of the distribution…

高能物理 - 实验 · 物理学 2022-03-23 A. M. M. G. Theulings , S. X. Tao , C. W. Hagen , H. Van der Graaf

We study the effects of bismuth doping on the crystal structure and phase transitions in single crystals of the perovskite semiconductor methylammonium lead tribromide, MAPbBr3. By measuring temperature-dependent specific heat capacity (Cp)…

We report the effect of carbon doping in Ti-stabilized nonstoichiometric molybdenum diboride (Mo$_{0.96}$Ti$_{0.04}$)$_{0.8}$B$_{2}$, which exhibits bulk superconductivity below $T_{\rm c}$ = 7.0 K. It is found that…

超导电性 · 物理学 2023-03-01 Wuzhang Yang , Guorui Xiao , Qinqing Zhu , Shijie Song , Guang-Han Cao , Zhi Ren

The report on the near-ambient superconductivity in a nitrogen-doped lutetium hydride has stimulated great interest in this material (Dasenbrock-Gammon et al. 2023). While its superconductivity is still a subject of debate, the structure of…

超导电性 · 物理学 2023-07-21 Yang Sun , Feng Zhang , Shunqing Wu , Vladimir Antropov , Kai-Ming Ho

Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with…

We performed density functional theory calculations on heterostructures of single layers of hexagonal BN and MoS$_2$ to assess the effect of doping in the BN sheet and of interstitial Na atoms on the electronic properties of the adjacent…

介观与纳米尺度物理 · 物理学 2015-06-19 Roland Gillen , John Robertson , Janina Maultzsch

Polycrystalline MgB2-xCx samples with x=0.05, 0.1, 0.2, 0.3, 0.4 nano-particle carbon powder were prepared using an in-situ reaction method under well controlled conditions to limit the extent of C substitution. The phases, lattice…

超导电性 · 物理学 2015-06-24 S. Soltanian , J. Horvat , X. L. Wang , P. Munroe , S. X. Dou

Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles (NPs) are deposited onto intrinsic Si and laser processed using an 807.5nm cw-laser. During…

Potentially superhard $W_{1-x}Zr_xB_2$ polymorph hP6-P6$_3$/mmc-$WB_2$ with zirconium doping in the range of x=0.0-0.25 was thoroughly analyzed within the framework of first-principles density functional theory from the structural and…

Structure, transport and magnetic properties have been investigated for layered NaCo1-xMnxO2 materials. With the increase of Mn-doping amount, measurements of x-ray diffraction indicate that the in-plane lattice parameter a decreases…

强关联电子 · 物理学 2007-05-23 W. Y. Zhang , H. C. Yu , Y. G. Zhao , X. P. Zhang , Y. G. Shi , Z. H. Cheng , J. Q. Li

Copper and Nickel impurities have been doped into the iron pnictide superconductor Ba0.6K0.4Fe2As2. Resistivity measurements reveal that Cu and Ni impurities suppress superconducting transition temperature T_c with rates of \Delta T_c/Cu-1%…

超导电性 · 物理学 2015-06-15 Peng Cheng , Bing Shen , Fei Han , Hai-Hu Wen

Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron…

介观与纳米尺度物理 · 物理学 2012-07-31 Sugata Mukherjee , T. P. Kaloni
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