相关论文: Diffusion processes in germanium and silicon films…
Epitaxial films of heavy fermion CeCu2Ge2 and CeFe2Ge2 are grown on DyScO3 and MgO substrates using molecular beam epitaxy. The growth begins via island nucleation leading to a granular morphology. The grains grow flat with c-axis…
In epitaxially strained ferroelectric thin films and superlattices, the ferroelectric transition temperature can lie above the growth temperature. Ferroelectric polarization and domains should then evolve during the growth of a sample, and…
Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial…
Material absorption is a key limitation in nanophotonic systems; however, its characterization is often obscured by scattering and diffraction loss. Here we show that nanomechanical frequency spectroscopy can be used to characterize the…
The study of the relaxation mechanism of amorphous germanium after femtosecond laser irradiation is presented in this work. In particular, a thin germanium coating was deposited onto a glass substrate through the electron beam vacuum…
Reactive dual ion beam sputter deposition of AlN thin films was carried out for the analysis of surface growth characteristics by Atomic Force Microscopy. The variation of roughness as a function of deposition time was analysed by Dynamic…
Many fundamental processes of structural changes at surfaces occur on a pico- or femtosecond time scale. In order to study such ultra-fast processes, we have combined modern surface science techniques with fs-laser pulses in a pump-probe…
In this work, we report on the growth of high-mobility $\beta$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature…
Nickel carbon based multi-layers are a viable route towards future hard X-ray and soft $\gamma$-ray focusing telescopes. Here, we study the Pulsed Laser Deposition growth conditions of such bilayers by Reflective High Energy Electron…
Unintentionally formed interfacial layers are ubiquitous in semiconductor devices that operate at extreme conditions. However, these layers' structure and properties often remain unknown due to the thinness of these naturally formed…
Nanocomposite films of Zinc Oxide and Silicon were grown by thermal evaporation technique using varying ratios of ZnO:Si in the starting material. Analysis reveal the role of ZnO and amorphous silicon interface in contributing to relatively…
Glasses are nonequilibrium solids with properties highly dependent on their method of preparation. In vapor-deposited molecular glasses, structural organization could be readily tuned with deposition rate and substrate temperature. Herein,…
Si-doped GaN films were grown on $\textit{c}$-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N$_2$ in Ar-N2 growth atmosphere and their epitaxial character was ascertained by phi-scans. Energy…
The reported diffusion constants for hydrogen in silicon vary over six orders of magnitude. This spread in measured values is caused by the different concentrations of defects in the silicon that has been studied. Hydrogen diffusion is…
Using holography, we compute the Chern-Simons diffusion rate of 4d gauge theories constructed by wrapping D4-branes on a circle. In the model with antiperiodic boundary conditions for fermions, we find that it scales like $T^6$ in the…
Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been great deal of progress in hyperdoping of Ga doped Ge using ion…
The stability of interfaces and the mechanisms of thin film growth on semiconductors are issues of central importance in electronic devices. These issues can only be understood through detailed study of the relevant microscopic processes.…
We study the effects of time-dependent substrate/film temperature in the deposition of a mesoscopically thick film using a statistical model that accounts for diffusion of adatoms without lateral neighbors whose coefficients depend on an…
We revisit the process of gravitational sedimentation of helium and heavy elements in the intra-cluster medium. We find that helium applies an inward drag force on heavy elements, boosting their sedimentation speed to nearly half its own.…
The Ludwig-Soret effect, the migration of a species due to a temperature gradient, has been extensively studied without a complete picture of its cause emerging. Here we investigate the dynamics of DNA and spherical particles sub jected to…