相关论文: Diffusion processes in germanium and silicon films…
Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without $\alpha$-Cr$_2$O$_3$ buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of $\alpha$-Ga$_2$O$_3$ and…
Pb-free ferroelectric thin films are gaining attention due to their applicability in memory, sensor, actuator, and microelectromechanical system. In this work, Na$_{0.4}$K$_{0.1}$Bi$_{0.5}$TiO$_3$ (NKBT0.1) ferroelectric thin films were…
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we…
Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the…
Germanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics and thermophotovoltaics. Its combination with III-V compound semiconductors through epitaxial…
We consider the role of diffusion in the redistribution of elements in the hot interstellar medium (ISM) of early-type galaxies. It is well known that gravitational sedimentation can affect significantly the abundances of helium and heavy…
The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric…
Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant 4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed large…
Low-temperature epitaxial growth of refractory transition-metal nitride thin films by means of physical vapor deposition has been a recurring theme in advanced thin-film technology for several years. In the present study, 150-nm-thick…
Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunneling microscopy. Two process resulting in appearance of…
It has been shown that during thermal treatments of silicon layers preamorphized by germanium implantation and then implanted with boron ions the transport of impurity atoms occurs right up to a temperature of 850^{\circ}C due to migration…
Hydrogen point defects in silicon still hold unsolved problems, whose disclosure is fundamental for future advances in Si technologies. Among the open issues is the mechanism for the condensation of atomic hydrogen into molecules in Si…
In this paper we present kinetic properties such as migration and decomposition barriers of hydrogen defects in silicon calculated by Density Functional Theory (DFT) based methods. We study the following defects: H atoms (H) and ions (H+,…
We study how the substrate temperature influences the structural properties of carbon films deposited by PVD (physical vapor deposition) techniques. We adapted a heating system inside the deposition chamber, with temperatures up to…
Ga2O3 thin films were deposited by reactive magnetron sputtering from a liquid gallium target. The influence of deposition temperature, substrate type, and discharge parameters on the structural and electrical properties was systematically…
A two stream model of boron diffusion in silicon has been developed. The model is intended for simulation of transient enhanced diffusion including redistribution of ion-implanted boron during low temperature annealing. The following…
We study a model for thin film electrodeposition in which instability development by preferential adsorption and reduction of cations at surface peaks competes with surface relaxation by diffusion of the adsorbates. The model considers…
The growth of para-sexiphenyl (6P) thin films as a function of substrate temperature on Ir{111} supported graphene flakes has been studied in real-time with Low Energy Electron Microscopy (LEEM). Micro Low Energy Electron Diffraction (\mu…
Helium films show various quantum phases that undergo quantum phase transitions by changing coverage n. We found anomalous elastic phenomena in bosonic 4He and fermionic 3He films adsorbed on a glass substrate. The films stiffen under AC…
The thermal properties of amorphous materials have attracted significant attention due to their technological importance in electronic devices. Additionally, the disorder-induced breakdown of the phonon gas model makes vibrational transport…