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Thin-disk lasers (TDLs) have made spectacular progress in the last decades both in continuous-wave and ultrafast operation. Nowadays, single thin-disk oscillators with > 16 kW of continuous-wave (CW)-power have been demonstrated and…

Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…

Laser micro-welding is an advanced manufacturing method today applied in various domains. However, important physical limitations have prevented so far to demonstrate its applicability in silicon and other technology-essential…

We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the…

In this paper, the interaction of a 1064 nm continuum-wave laser with inductively-coupled plasma generated in a fluorescent light bulb has been studied both experimentally and theoretically. The absorption coefficients pertaining to the…

In a series of experiments at the Texas Petawatt Laser (TPW) in Austin, TX, we have used attenuation spectrometers, dosimeters, and a new Forward Compton Electron Spectrometer (FCES) to measure and characterize the angular distribution,…

Observations at mid-infrared (4.8-17.65 um) and radio (0.7-1.3 cm) wavelengths are used to constrain the structure of the high-mass star-forming region W3 IRS5 on 0.1'' (200 AU) scales. Two bright mid-infrared sources are detected, as well…

This article presents studies on low-field electrical conduction in the range 4-to-300 K for a ultrafast material: InGaAs:ErAs grown by molecular beam epitaxy. The unique properties include nano-scale ErAs crystallines in host…

Due to their high optical phonon energies GaInP/AlGaInP heterostructures are a promising active medium to solve the problem of creating compact semiconductor sources with an operating frequency range of 5.5-7 THz. In this work, the…

The paper reports the results of numerical studies on the generation of heavy ions from a sub-micrometre gold target irradiated by a high-energy (60 J) high-intensity (~ 2 x 10^20 W/cm2) sub-ps laser pulse. The properties of the heavy ion…

This paper provides indoor reflection, scattering, transmission, and large-scale path loss measurements and models, which describe the main propagation mechanisms at millimeter wave and Terahertz frequencies. Channel properties for common…

We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency…

Simulations of ionization induced injection in a laser driven plasma wakefield show that high-quality electron injectors in the 50-200 MeV range can be achieved in a gas cell with a tailored density profile. Using the PIC code Warp with…

Nanometer scale power amplifiers (PA) at sub-THz suffer from severe parasitic effects that lead to experience limited maximum frequency and reduced power performance at the device transceiver front end. The integrated circuits researchers…

Ultrafast laser systems operating with high-average power in the wavelength range from 1.9 um to 3 um are of interest for a wide range of applications for example in spectroscopy, material processing and as drivers for secondary sources in…

Significant efficiency droop is a major concern for light-emitting diodes and laser diodes operating at high current density. Recent study has suggested that heavily Bi-alloyed GaAs can decrease the non-radiative Auger recombination and…

Laser wakefield acceleration, characterized by the extremely high electric field gradient exceeding 100GV/m, is regarded as a compact and cost affordable technology for the next generation of particle colliders and light sources. However,…

In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…

The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers…

Relativistic temperature electrons higher than 0.5 MeV are generated typically with laser intensities of about 10$^{18}$ W/cm$^{2}$. Their generation with high repetition rate lasers that operate at non-relativistic intensities…