相关论文: Performance characteristics of low threshold curre…

The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…

We report on lasing at room temperature and at telecommunications wavelength from photonic crystal nanocavities based on InAsP/InP quantum dots. Such laser cavities with a small modal volume and high quality factor display a high…

H-poor superluminous supernovae (SLSNe-I) are characterized by O II lines around 4,000 - 4,500 A in pre-/near-maximum spectra, so-called W-shaped O II lines. As these lines are from relatively high excitation levels, they have been…

Relativistic electrons generated by the interaction of petawatt-class short laser pulses with solid targets can be used to generate bright X-rays via bremsstrahlung. The efficiency of laser energy transfer into these electrons depends on…

Atomically thin layered two dimensional (2D) material has provided a rich library for both fundamental research and device applications. One of the special advantages is that, bandgap engineering and controlled material response can be…

Mid-wave infrared (MWIR) frequency comb is expected to dramatically improve the precision and sensitivity of molecular spectroscopy. For high resolution application, high speed MWIR photodetector is one of the key components, however, the…

We report a detailed low-temperature thermodynamic investigation (heat capacity and magnetization) of the superconducting state of KFe2As2 for H || c axis. Our measurements reveal that the properties of KFe2As2 are dominated by a relatively…

Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN…

We have measured the complex dynamical conductivity, $\sigma = \sigma_{1} + i\sigma_{2}$, of superconducting Ba(Fe$_{0.9}$Co$_{0.1}$)$_{2}$As$_{2}$ ($T_{c} = 22$ K) at terahertz frequencies and temperatures 2 - 30 K. In the frequency…

The efficiency and operating range of a photonic crystal laser is improved by passivating the InGaAs quantum well (QW) gain medium and GaAs membrane using an (NH4)S treatment. The passivated laser shows a four-fold reduction in nonradiative…

Substrate-transferred crystalline coatings have recently emerged as a groundbreaking new concept in optical interference coatings. Building upon our initial demonstration of this technology, we have now realized significant improvements in…

Surface acoustic wave (SAW) devices based on thin films of ZnO are a well established technology. However, SAW devices on bulk ZnO crystals are not practical at room temperature due to the significant damping caused by finite electrical…

Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along…

We show how intrinsic material properties modify light transmission through subwavelength hole arrays on thin metallic films in the THz regime. We compare the temperature-dependent transmittance of Au films and MgB$_{2}$ films. The…

We have studied the steady state and dynamic optical properties of semiconductor microdisk lasers whose active region contains interface fluctuation quantum dots in GaAs/(Ga,Al)As quantum wells. Steady-state measurements of the stimulated…

The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer…

While advancing a physics-based comprehensive photodetector-simulation model, we propose a novel device design of the mid-wavelength infrared nBn photodetectors by exploiting the inherit flexibility of the $InAs_{1-x}Sb_{x}$ ternary alloy…

We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient…

We demonstrate a low noise short wavelength infrared (SWIR) Sb based type II superlattice (T2SL) avalanche photodiodes (APD). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by…

In this study, InSb nanowires have been formed by electrodeposition and integrated into NW-FETs. NWs were formed in porous anodic alumina (PAA) templates, with the PAA pore diameter of approximately 100 nm defining the NW diameter.…