相关论文: Performance characteristics of low threshold curre…

Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser at room under…

For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this…

We probe the possible double-Weyl state in cubic SrSi2 using optical spectroscopy. The complex optical conductivity was measured in a frequency range from 70 to 22 000 cm-1 at temperatures down to 10 K at ambient pressure. The optical…

The performance of a near-field thermophotovoltaic system with a tandem-cell structure composed of thin-film p-doped GaSb and n-doped InAs sub-cells on a gold backside reflector is theoretically investigated. The temperatures of the…

We carefully investigated the transport and capacitance properties of few layer charge density wave (CDW) 2H-TaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the…

We present a theoretical analysis of mid-infrared radiative recombination in InAs/GaSb superlattices (SLs). We employ a semi-analytical plane wave expansion method in conjunction with an 8-band $\mathbf{k} \cdot \mathbf{p}$ Hamiltonian to…

Nanowire lasers are sought for near-field and on-chip photonic applications as they provide integrable, coherent and monochromatic radiation. A wavelength-scale nanowire acts as both the gain medium and the cavity for the lasing action: the…

The threshold current density of narrow (1.5 {\mu}m) ridge-waveguide InGaN multi-quantum-well laser diodes, as well as the shape of their lateral far-field patterns, strongly depend on the etch depth of the ridge waveguide. Both effects can…

We present thermal conductivity measurements performed in three short-period (GaAs)_9(AlAs)_5 superlattices. The samples were grown at different temperatures, leading to different small scale roughness and broadening of the interfaces. The…

Computer simulations with Synopsys' Sentaurus TCAD of opto-electrical characteristics of separate-confinement heterostructure laser based on AlGaAs are used as an example to study the role of the width and depth of Quantum Well (QW) active…

Avalanche photodiodes used for greenhouse gas sensing often use a mesa-structure that suffers from high surface leakage currents and edge breakdown. In this paper, we report 2-micron InGaAs/GaAsSb superlattice (SL) based planar PIN diodes…

The optimization of laser resonators represents a crucial issue for the design of terahertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide…

Quantum technologies with quantum correlated light require photodiodes with near-perfect `true' quantum efficiency, the definition of which adequately accounts for the photodiode dark noise. Future squeezed-light-enhanced gravitational wave…

We have extended the range of the high-pressure optical spectroscopy to the far-infrared region keeping the accuracy of ambient-pressure experiments. The newly-developed method offers a powerful tool for the study of pressure-induced phase…

Thermal transport measurements have been performed on single-crystalline Co-doped BaFe2As2 down to 0.1 K and under magnetic fields up to 7 T. Significant peak anomalies are observed in both thermal conductivity and thermal Hall conductivity…

Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions.…

We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast…

The optical and scintillation properties of undoped, Si-doped, and Si, B co-doped GaAs samples were studied. The light yield specification and X-ray luminescence of GaAs over a wide IR region by using Si and InGaAs photodetectors are…

In this paper, by representing a single level rate equation model for InAs/GaAs quantum dot lasers and computations by fourth order Runge-Kutta method some characteristics of the output laser are considered. The change of photon number in…

Operation of semiconductor lasers in the 20--50 $\mu$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we…