相关论文: Performance characteristics of low threshold curre…
We investigate the nonlinear optical response of a commercial extended-wavelength In$_{0.81}$Ga$_{0.19}$As photodetector. Degenerate two-photon absorption in the mid-infrared range is observed at room temperature using a quantum cascade…
Lithium thioindate (LiInS$_{2}$) is a new nonlinear chalcogenide biaxial material transparent from 0.4 to 12 $\mu$m, that has been successfully grown in large sizes and good optical quality. We report on new physical properties that are…
Coherent super-high-frequency (SHF) vibrations provide an excellent tool for the modulation and control of excitations in semiconductors. Here, we investigate the piezoelectric generation and propagation of longitudinal bulk acoustic waves…
Spectral imaging and detection of mid-infrared (mid-IR) wavelengths are emerging as an enabling technology of great technical and scientific interest; primarily because important chemical compounds display unique and strong mid-IR spectral…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in…
On-chip coherent laser sources are crucial for the future of photonic integrated circuits, yet progress has been hindered by the complex interplay between material quality, device geometry, and performance metrics. We combine…
The integration of optomechanics and optoelectronics in a single device opens new possibilities for developing information technologies and exploring fundamental phenomena. Gallium arsenide (GaAs) is a well-known material that can bridge…
Solution-processed organic-inorganic lead halide perovskites have recently emerged as promising gain media for tunable semiconductor lasers, and have come to rival inorganic III-V group semiconductors as the material candidate for…
We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates.…
Recently there is an increasing attention to electrically pumped room temperature sub-wavelength plasmon sources because of their various potential applications mainly in the integrated plasmonic field. In this paper, a GaAs/AlGaAs quantum…
We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means…
Nanowires (NWs) with their quasi-one-dimensionality often present different structural and opto-electronic properties than their thin-film counterparts. The thinner they are the larger these differences are, in particular in the…
A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the…
We study the degree of second-order coherence of the emission of a high-power multi-quantum well superluminescent diode with a lateral tapered amplifier section with and without feedback. When operated in an external cavity, the degree of…
We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and…
Current optical communication system operating at 1.55 {\mu}m wavelength band may not be able to continually satisfy the growing demand on the data capacity within the next few years. Opening a new spectral window at around 2 {\mu}m…
GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that optical emission of such NWs occurs either predominantly above…
Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers…
We report on photoluminescence in the 3-7 $\mu$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at…