相关论文: Performance characteristics of low threshold curre…
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates…
We present GaSb-based interband cascade lasers emitting at a center wavelength of 6.12 $\mu$m at 20$^\circ$C in continuous-wave operation up to a maximum operating temperature of 40$^\circ$C. Pulsed measurements based on broad area devices…
The cross-plane thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is measured from 13 K to 300 K using the 3{\omega} method. Thermal conductivity is reduced by up to 2 orders of magnitude relative to the GaSb bulk substrate.…
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 ${\mu}$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon.…
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip…
This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well as experimental findings. A microscopic theory is applied…
We present single-mode nanowire (NW) lasers with ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse…
In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the…
High-quality planar cavities with low-absorption mirrors based on $Al_{0.2}Ga_{0.8}As/Al_{0.9}Ga_{0.1}As$ layers demonstrate continuous wave lasing at a wavelength of 956 nm. At 300 K, the threshold power density and quality-factor at the…
We demonstrate that absorption saturation of a mid-infrared intersubband transition can be engineered to occur at moderate light intensities of the order of 10-20 kW$.$cm$^{-2}$ and at room temperature. The structure consists of an array of…
Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic…
Cubic boron arsenide (BAs) is an emerging semiconductor material with a record-high thermal conductivity of 1300 W/mK. However, many fundamental properties of BAs remain unexplored experimentally. Here, for the first time, we report the…
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial…
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…
As superconducting kinetic inductance detectors (KIDs) continue to grow in popularity for sensitive submillimeter detection and other applications, there is a drive to advance toward lower-loss devices. We present measurements of diagnostic…
High speed mid-wave infrared (MWIR) photodetectors have important applications in the emerging areas such high-precision frequency comb spectroscopy and light detection and ranging (LIDAR). In this work, we report a high-speed…
The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…
We demonstrate how the presence of gain-loss contrast between two coupled identical resonators can be used as a new degree of freedom to enhance the modulation frequency response of laser diodes. An electrically pumped microring laser…
Highly compact lasers with ultra-low threshold and single-mode continuous wave (CW) operation have been a long sought-after component for photonic integrated circuits (PICs). Photonic bound states in the continuum (BICs), due to their…
Light-emitting diodes (LEDs) can bridge the gap between narrow linewidth, expensive lasers and broadband, inefficient thermal globars for low-cost chemical sensing in the mid-infrared (mid-IR). However, the efficiency of III-V based mid-IR…