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Optically active spin defects in van der Waals (vdW) materials have recently emerged as versatile quantum sensors, enabling applications from nanoscale magnetic field detection to the exploration of novel quantum phenomena in condensed…

Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and…

van der Waals heterostructures assembled from atomically thin crystals are ideal model systems to study spin-orbital coupled transport because they exhibit a strong interplay between spin, lattice and valley degrees of freedom that can be…

介观与纳米尺度物理 · 物理学 2021-08-18 Carmen Monaco , Aires Ferreira , Roberto Raimondi

Methods to generate spin-polarised electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global…

This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulphide WS$_2$ on epitaxial graphene (EG) on SiC(0001). The WS$_2$ is grown via chemical vapor deposition (CVD) onto the EG.…

Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well…

介观与纳米尺度物理 · 物理学 2018-07-16 Shengwei Jiang , Lizhong Li , Zefang Wang , Jie Shan , Kin Fai Mak

Weyl semimetal (WSM) is expected to be an ideal spintronic material owing to its spin currents carried by the bulk and surface states with spin-momentum locking. A photocurrent generation in noncentrosymmetric WSM was also predicted owing…

强关联电子 · 物理学 2017-11-22 Kai Sun , Shuaishuai Sun , Cong Guo , Linlin Wei , Huanfang Tian , Huaixin Yang , Genfu Chen , Jianqi Li

Ferroelectric materials hold great potential for alternative memories and computing, but several challenges need to be overcome before bringing the ideas to applications. In this context, the recently discovered link between electric…

材料科学 · 物理学 2022-10-18 Homayoun Jafari , Arunesh Roy , Jagoda Sławińska

Two-dimensional van der Waals magnets hosting topological magnetic textures, such as skyrmions, show promise for applications in spintronics and quantum computing. Electrical control of these topological spin textures would enable novel…

Layered 2D van der Waals materials, such as transition metal dichalcogenides, are promising for nanoscale spintronic and optoelectronic applications. Harnessing their full potential requires understanding both intrinsic transport and the…

When graphene is placed on a monolayer of semiconducting transition metal dichalcogenide (TMD) its band structure develops rich spin textures due to proximity spin-orbital effects with interfacial breaking of inversion symmetry. In this…

介观与纳米尺度物理 · 物理学 2018-01-03 Manuel Offidani , Mirco Milletarí , Roberto Raimondi , Aires Ferreira

Van der Waals (vdW) heterostructures consisting of bilayer graphene (BLG) encapsulated within monolayers of strong spin-orbit semiconductor WS$_2$ or ferromagnetic semiconductor Cr$_2$Ge$_2$Te$_6$ (CGT), are investigated. By performing…

介观与纳米尺度物理 · 物理学 2021-08-18 Klaus Zollner , Jaroslav Fabian

Utilizing spin or valley degree of freedom is one of the promising approaches to realize more energy-efficient information processing. In the 2D transition metal dichalcogenide, the spin/valley current can be generated by utilizing the…

材料科学 · 物理学 2021-02-09 Abdullah Rasmita , Chongyun Jiang , Hui Ma , Zhurun Ji , Ritesh Agarwal , Wei-bo Gao

The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as…

介观与纳米尺度物理 · 物理学 2023-12-13 Boxuan Yang , Bibek Bhujel , Daniel G. Chica , Evan J. Telford , Xavier Roy , Maxen Cosset-Chéneau , Bart J. van Wees

We experimentally investigate spin-polarized transport between a ferromagnetic Ni electrode and a surface of Weyl semimetal, realized in a thick WTe$_2$ single crystal. For highly-transparent Ni-WTe$_2$ planar junctions, we observe…

介观与纳米尺度物理 · 物理学 2019-04-03 A. Kononov , O. O. Shvetsov , A. V. Timonina , N. N. Kolesnikov , E. V. Deviatov

The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. Here we create van der…

All van der Waals (vdW) Fe3GeTe2/Cr2Ge2Te6/graphite magnetic heterojunctions have been fabricated via mechanical exfoliation and stacking, and their magnetotransport properties are studied in detail. At low bias voltages large negative…

材料科学 · 物理学 2022-10-26 Honglei Feng , Gang Shi , Dayu Yan , Yong Li , Youguo Shi , Yang Xu , Peng Xiong , Yongqing Li

Understanding spin physics in graphene is crucial for developing future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse…

介观与纳米尺度物理 · 物理学 2022-01-05 C. K. Safeer , Franz Herling , Won Young Choi , Nerea Ontoso , Josep Ingla-Aynés , Luis E. Hueso , Fèlix Casanova

We propose a spin valve that is based on van der Waals antiferromagnetism and fully electrically controlled. The device is composed of two antiferromagnetic terminals that allow for vertical bias control and a linked central scattering…

介观与纳米尺度物理 · 物理学 2021-07-15 Xue-Chao Zhai , Ziming , Xu , Qirui Cui , Yingmei Zhu , Hongxin Yang , Yaroslav M. Blanter

The generation of spatially homogeneous spin polarization by application of electric current is a fundamental manifestation of symmetry-breaking spin--orbit coupling (SOC) in solid-state systems, which underpins a wide range of spintronic…

介观与纳米尺度物理 · 物理学 2022-09-30 Alessandro Veneri , David T. S. Perkins , Csaba G. Péterfalvi , Aires Ferreira