相关论文: Strain modulation of Si vacancy emission from SiC …
We report a comprehensive study on the optical properties of cubic boron nitride (c-BN) and its optically active defects. Using electron energy-loss spectroscopy (EELS) within a monochromated scanning transmission electron microscope (STEM)…
We investigate the photon emission in coupled quantum dots based on symmetry considerations. With the help of a new theorem we proved, we reveal the origin of the various emission patterns, which is the combinative symmetry in the time…
Laboratory measurements of unpolarized and polarized absorption spectra of various samples and crystal stuctures of silicon carbide (SiC) are presented from 1200--35,000 cm$^{-1}$ ($\lambda \sim$ 8--0.28 $\mu$m) and used to improve the…
The carbon vacancy in $4H$-SiC is a powerful minority carrier recombination center and a major cause of degradation of SiC-based devices. Despite the extensiveness of the literature regarding the characterization and modeling of the defect,…
Local deformation of atomically thin van der Waals materials provides a powerful approach to create site-controlled chip-compatible single-photon emitters (SPEs). However, the microscopic mechanisms underlying the formation of such…
We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from…
Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. We access ensemble G color center formation dynamics and radiation-induced atomic disorder…
Solid state quantum emitters are between the most promising candidates for single photon generation in quantum technologies. However, they suffer from decoherence effects which limit their efficiency and indistinguishability. For instance,…
Semiconducting single-wall carbon nanotubes (SWCNTs) are a promising material platform for near-infrared in-vivo imaging, optical sensing, and single-photon emission at telecommunication wavelengths. The functionalization of SWCNTs with…
We report the design, fabrication and optical investigation of electrically tunable single quantum dot - photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. Unlike…
We report on coupling between semiconducting single-wall carbon nanotubes (s-SWNT) photoluminescence and silicon microring resonators. Polyfluorene extracted s-SWNT deposited on such resonators exhibit sharp emission peaks, due to…
Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon…
Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the C-C bonding region corresponding to different defect structures for neon and…
To clarify the cause of the low channel conductivity at the SiO2/4H-SiC interface, the wavefunction at the SiC conduction band minimum was calculated using density functional theory under an applied electric field. We found that the…
Shallow negatively charged silicon-vacancy centers have applications in magnetic quantum sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) have different spin relaxation rates and optical spin…
The unrivaled maturity of its nanofabrication makes silicon a promising hardware platform for quantum information processing. To this end, efficient single-photon sources and spin-photon interfaces have been implemented by integrating color…
Efficient light-matter interaction lies at the heart of many emerging technologies that seek on-chip integration of solid-state photonic systems. Plasmonic waveguides, which guide the radiation in the form of strongly confined surface…
Recently, density functional theory-based high-throughput screening of point defects in 4H-SiC revealed the positively charged chlorine-vacancy (ClV) defect to be a promising quantum bit candidate emitting at telecom wavelengths, with an…
By applying our methodology, we propose a defect in 4H-SiC which combines a Si vacancy and a C atom substituted with S (VSiSC) to have a spin-triplet ground state with the spin qubit functionality. Our calculations confirm that all…
The spatial resolution and fluorescence signal amplitude in stimulated emission depletion (STED) microscopy is limited by the photostability of available fluorophores. Here, we show that negatively-charged silicon vacancy (SiV) centers in…