相关论文: Strain modulation of Si vacancy emission from SiC …
The charge dynamics of silicon-vacancy (SiV) centers have been investigated for the first time in high-pressure high-temperature nanodiamonds (NDs) with varying concentrations of substitutional nitrogen (Ns). We demonstrate a controlled…
Triboemission is a phenomenon associated with the sliding of variety of materials. The phenomenon is thought to be related to wear of diamond tools used in precision machining of semiconductors. As such, the physics of emission has recently…
Strain engineering enables the direct modification of the atomic bonding and is currently an active area of research aimed at improving the electrocatalytic activity. However, directly measuring the lattice strain of individual catalyst…
Photonic resonators allowing to confine the electromagnetic field in ultra-small volumes and with long decay times are crucial to a number of applications requiring enhanced nonlinear effects. For applications to integrated photonic devices…
Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional radiation resistance, excellent environmental adaptability, and fast response time.…
We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, Ec-0.4eV and Ec-0.7eV. They were previously assigned to…
We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both…
We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires…
Spin-active defects in silicon carbide (SiC) are promising quantum light sources for realizing scalable quantum technologies. In different applications, these photoluminescent defects are often placed in a nanostructured host or close to…
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions,…
Single photon sources are an integral part of various quantum technologies, and solid state quantum emitters at room temperature appear as a promising implementation. We couple the fluorescence of individual silicon vacancy centers in…
Space charge layers (SCLs) at grain boundaries play a crucial role in modulating local electric fields and influencing the functional properties of materials, such as oxygen vacancy migration and ionic conductivity in oxide ceramics.…
Here, we evaluate multislice electron ptychography as a tool to carry out depth-resolved atomic resolution characterization of point defects, using silicon carbide as a case study. Through multislice electron scattering simulations and…
We propose a new energy conversion approach from a dc electric field to a terahertz wave based on hybrid semiconductors by combining two-dimensional (2D) crystalline layers and a thick conducting material with possible applications as a…
Patterning the front side of an ultra-thin crystalline silicon (c Si) solar cell helps keeping the energy conversion efficiency high by compensating for the light absorption losses. A super-Gaussian mathematical expression was used in order…
Vanadium in silicon carbide is a promising spin photon interface candidate with optical transitions in the telecom range and a long lived electron spin, hosted in an advanced semiconductor platform. In this detailed investigation of the…
Triangular cross-section SiC photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission…
We show that electron correlations control the photophysics of defects in SiC through both renormalization of the quasiparticle bandstructure and exciton effects. We consider the carbon vacancy, which is a well-identified defect with two…
The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances in electron optics and…
One dimensional nanobeam photonic crystal cavities are fabricated in silicon dioxide with silicon nanocrystals. Quality factors of over 9 x 10^3 are found in experiment, matching theoretical predictions, with mode volumes of 1.5(lambda/n)^3…