相关论文: Planar Hall effect caused by the memory of antifer…
We theoretically investigated the magnetoresistance (MR) and planar Hall effect (PHE) in Weyl semimetals based on the semiclassical Boltzmann theory, focusing on the fine structure of the band dispersion. We identified that the negative…
The third-order nonlinear Hall effect (NLHE) serves as a sensitive probe of energy band geometric property, providing a new paradigm for revealing the Berry curvature distribution and topological response of quantum materials. In the Weyl…
In the $R$Al(Si,Ge) ($R$: lanthanides) family, both spatial inversion and time-reversal symmetries are broken. This may offer opportunities to study Weyl-fermion physics in nontrivial spin structures emerging from a noncentrosymmetric…
We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis oriented epitaxial thin films of La(0.8)Sr(0.2)MnO(3), for different current directions relative to the crystal…
Time-reversal symmetry breaking is the basic physics concept underpinning many magnetic topological phenomena such as the anomalous Hall effect (AHE) and its quantized variant. The AHE has been primarily accompanied by a ferromagnetic…
The high Chern-number quantum anomalous Hall effect (QAHE) is significant and fascinating due to the presence of multiple dissipationless chiral edge states. Here, we predict that monolayer NiSbO3 possesses the Chern number C = 3, confirmed…
The anomalous Hall {\color{black} e}ffect (AHE) has emerged as a key indicator of time-reversal symmetry breaking (TRSB) and topological features in electronic band structures. Absent of a magnetic field, the AHE requires spontaneous TRSB…
The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in…
Weyl semimetals are intriguing topological states of matter that support various anomalous magneto-transport phenomena. One such phenomenon is a negative longitudinal ($\mathbf{\nabla} T \parallel \mathbf{B}$) magneto-thermal resistivity,…
We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic…
Although much effort has been made to explore quantum anomalous Hall effect (QAHE) in both theory and experiment, the QAHE systems with tunable Chern numbers are yet limited. Here, we theoretically propose that NiAsO$_3$ and PdSbO$_3$,…
Electric-field control of magnetization promises to substantially enhance the energy efficiency of device applications ranging from data storage to solid-state cooling. However, the intrinsic linear magnetoelectric effect is typically small…
Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature…
We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both…
Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not…
Planar Hall effect (PHE) magnetic sensors are attractive for various applications where the field resolution is required in the range of sub-nano Tesla or in Pico Tesla. Here we present a detailed noise study of the PHE sensors consisting…
Stemming from antiferromagnetic coupling, exchange bias allows inverted hysteresis in a magnetic system. Such room temperature magnetic reversal has yet to be observed in an amorphous antiferromagnet. Furthermore, the impact of this…
Here, we present a detailed theoretical and experimental study on the pressure induced switching of anomalous Hall effect (AHE) in the triangular antiferromagnetic (AFM) compound Mn$_3$Sn. Our theoretical model suggests pressure driven…
We report the observation of anomalous Hall effect in Mn$_3$Sn polycrystalline thin films deposited on Pt coated Al$_2$O$_3$ substrate with a large anomalous Hall conductivity of 65($\Omega$cm)$^{-1}$ at 3K. The Hall and magnetic…
The origin of the Hall effect in many itinerant ferromagnets is still not resolved, with an anomalous contribution from the sample magnetization that can exhibit extrinsic or intrinsic behavior. We report the first mid-infared (MIR)…