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The temperature dependence of the local structure of V_2O_3 in the vicinity of the metal to insulator transition (MIT) has been investigated using hard X-ray absorption spectroscopy. It is shown that the vanadium pair distance along the…

强关联电子 · 物理学 2009-11-11 P. Pfalzer , G. Obermeier , M. Klemm , S. Horn , M. L. denBoer

We focus on the central problem of discriminating between metallic and insulating behaviour in amorphous alloys formed between a semiconductor and a metal. For this, the logarithmic temperature derivative of the conductivity, w = d ln sigma…

无序系统与神经网络 · 物理学 2007-05-23 A. Mobius , C. J. Adkins

The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on…

We consider low-temperature behavior of weakly interacting electrons in disordered conductors in the regime when all single-particle eigenstates are localized by the quenched disorder. We prove that in the absence of coupling of the…

介观与纳米尺度物理 · 物理学 2009-11-11 D. M. Basko , I. L. Aleiner , B. L. Altshuler

A large number of novel two-dimensional (2D) materials are constantly discovered and deposed into the databases. Consolidate implementation of machine learning algorithms and density functional theory (DFT) based predictions have allowed…

材料科学 · 物理学 2022-05-03 Andrey A. Kistanov , Stepan A. Shcherbinin , Romain Botella , Artur Davletshin , Wei Cao

We report the observation of a parallel magnetic field induced metal-insulator transition (MIT) in a high-mobility two-dimensional electron gas (2DEG) for which spin and localization physics most likely play no major role. The high-mobility…

介观与纳米尺度物理 · 物理学 2015-03-19 Xiaoqing Zhou , B. Schmidt , C. Proust , G. Gervais , L. N. Pfeiffer , K. W. West , S. Das Sarma

Using conceptually and procedurally consistent density functional theory (DFT) calculations with an advanced meta-GGA exchange-correlation functional in ab initio molecular dynamics simulations, we determine the insulator-metal transition…

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

We investigate the quantum mechanical origin of resistive phase transitions in solids driven by a constant electric field in the vicinity of a metal-insulator transition. We perform a nonequilibrium mean-field analysis of a…

强关联电子 · 物理学 2018-08-01 Jong E. Han , Jiajun Li , Camille Aron , Gabriel Kotliar

A review is given on the theory of metal-insulator transitions (MIT) in doped semiconductors. We focus in particular on reviewing theories of their anomalous magnetic properties, which emerge from the interplay of spin and charge…

无序系统与神经网络 · 物理学 2023-10-05 S. Kettemann

Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT)…

强关联电子 · 物理学 2015-06-17 Man Gu , Stuart A. Wolf , Jiwei Lu

The metal-insulator transition (MIT) of VO2 is discussed with particular emphasis on the structural instability of the rutile compounds toward dimerization. Ti substitution experiments reveal that the MIT is robust up to 20% Ti…

强关联电子 · 物理学 2022-02-01 Zenji Hiroi

The metal-insulator transition (MIT) of the Magneli phase V_4O_7 is studied by means of electronic structure calculations using the augmented spherical wave method. The calculations are based on density functional theory and the local…

凝聚态物理 · 物理学 2009-11-10 U. Schwingenschloegl , V. Eyert , U. Eckern

Transition metal phosphorous trichalcogenides, $M{\rm P}X_3$ ($M$ and $X$ being transition metal and chalcogen elements respectively), have been the focus of substantial interest recently because of their possible magnetism in the…

强关联电子 · 物理学 2019-12-05 Heung-Sik Kim , David Vanderbilt , Kristjan Haule

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…

This review first describes the evidence that strongly suggests the existence of the metal-insulator transition (MIT) in a two-dimensional electron system in Si regardless of the amount of disorder. Extensive studies of the charge dynamics…

强关联电子 · 物理学 2011-09-22 Dragana Popović

Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram…

强关联电子 · 物理学 2007-05-23 M. Potthoff

We study how the Mott metal-insulator transition (MIT) is influenced when we deal with electrons with different angular momenta. For lithium we found an essential effect when we include $p$-orbitals in the description of the Hilbert space.…

强关联电子 · 物理学 2009-11-10 Walter Alsheimer , Beate Paulus

Temperature-driven metal-insulator and pressure-driven insulator-metal transitions observed in(BEDT-TTF)8[Hg4X12(C6H5Y)2]] with X = Y = Br are studied through band structure calculations based on X-ray crystal structure determination and…

At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…

强关联电子 · 物理学 2019-02-20 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay