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Planar tunneling junctions of the presumably unconventional superconductor FeSe were prepared and investigated. The junctions consisted of FeSe/AlOx/Ag multilayers patterned lithographically into mesa structures. Bias voltage dependent…

超导电性 · 物理学 2018-01-30 Eike Venzmer , Alexander Kronenberg , Martin Jourdan

Break-junction tunneling spectroscopy at temperatures 30-50 mK in high magnetic field is used to directly probe the quasiparticle density of states within the energy gap in a single crystal Bi2212 high-$T_c$ superconductor. The measured…

超导电性 · 物理学 2009-11-11 S. I. Vedeneev , D. K. Maude

A comprehensive ellipsometric study was performed on Fe$_{1-x}$Co$_{x}$Si single crystals in the spectral range from 0.01 eV to 6.2 eV. Direct and indirect band gaps of 73 meV and 10 meV, respectively, were observed in FeSi at 7 K. One of…

材料科学 · 物理学 2015-05-13 D. Menzel , P. Popovich , N. N. Kovaleva , J. Schoenes , K. Doll , A. V. Boris

We calculate the tunneling density of states of a two-dimensional interacting electron gas in a quantizing magnetic field. We show that the observed pseudogap in the density of states can be understood as the result of an infrared…

介观与纳米尺度物理 · 物理学 2009-11-13 Kelly R. Patton , Michael R. Geller

We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large…

介观与纳米尺度物理 · 物理学 2011-04-07 Madhu Thalakulam , C. B. Simmons , B. M. Rosemeyer , D. E. Savage , M. G. Lagally , Mark Friesen , S. N. Coppersmith , M. A. Eriksson

We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions…

介观与纳米尺度物理 · 物理学 2015-01-23 Farkhad G. Aliev , Juan Pedro Cascales , Ali Hallal , Mairbek Chshiev , Stephane Andrieu

Local density calculations of the electronic structure of FeSi, FeSi_{1-x}Al_x and Fe_{1-x}Ir_xSi systems in the B20 structure are presented. Pure FeSi has a semi-conducting gap of 6 mRy at 0 K. Effects of temperature (T) in terms of…

材料科学 · 物理学 2016-08-31 T. Jarlborg

In this talk I present a summary of recent work on tunnel junctions of a fractional quantum Hall fluid and an electron reservoir, a Fermi liquid. I consider first the case of a single point contact. This is a an exactly solvable problem…

介观与纳米尺度物理 · 物理学 2007-05-23 Eduardo Fradkin

We study the electronic density of states in a mesoscopic superconductor near a transparent interface with a ferromagnetic metal. In our tunnel spectroscopy experiment, a substantial density of states is observed at sub-gap energies close…

介观与纳米尺度物理 · 物理学 2015-06-24 M. A. Sillanpaa , T. T. Heikkila , R. K. Lindell , P. J. Hakonen

The strongly correlated material FeSi exhibits several unusual thermal, magnetic, and structural properties under varying pressure-temperature (P-T) conditions. It is a potential thermoelectric alloy and a materials of several geological…

A new technique permits high fidelity measurement of the tunneling density of states (TDOS) of the two-dimensional electron gas. The obtained TDOS contains no distortions arising from low 2D in-plane conductivity and includes the…

介观与纳米尺度物理 · 物理学 2009-01-23 H. B. Chan , P. I. Glicofridis , R. C. Ashoori , M. L. Melloch

We develop a minimal model to calculate point-contact spectra between a metallic tip and a superconducting heavy-fermion system. We apply our tunneling model to the heavy fermion CeCoIn5, both in the normal and superconducting state. In…

超导电性 · 物理学 2011-04-08 Mikael Fogelström , W. K. Park , L. H. Greene , G. Goll , Matthias. J. Graf

We study tunneling between a localized defect state and a conduction band in the presence of strong electron-electron and electron-phonons interactions. We derive the tunneling rate as a function of the position of the defect energy level…

介观与纳米尺度物理 · 物理学 2007-05-23 D. Mozyrsky , I. Martin , A. Shnirman , M. B. Hastings

Tunneling spectroscopy is applied to tunnel junctions with only one or no ferromagnetic electrode to study the excitation of quasi particles in magnetic tunnel junctions. The bias dependence is investigated with high accuracy by inelastic…

材料科学 · 物理学 2010-08-03 Volker Drewello , Zoë Kugler , Günter Reiss , Andy Thomas

Effects of electron correlation in FeSi are studied in terms of the two-band Hubbard model with the density of states obtained from the band calculation. Using the self-consistent second-order perturbation theory combined with the local…

强关联电子 · 物理学 2009-10-31 Kentaro Urasaki , Tetsuro Saso

According to theoretical predictions the quasicrystalline (QC) electronic density of states (DOS) must have a rich and fine spiky structure which actually has resulted elusive. The problem with its absence may be related to poor structural…

材料科学 · 物理学 2016-04-20 R. Escudero , F. Morales

We present measurements of the superconducting gap of URu$_2$Si$_2$ made with scanning tunneling microscopy (STM) using a superconducting tip of Al. We find tunneling conductance curves with a finite value at the Fermi level. The density of…

超导电性 · 物理学 2015-06-03 A. Maldonado , I. Guillamon , J. G. Rodrigo , H. Suderow , S. Vieira , D. Aoki , J. Flouquet

We have measured the tunneling between two two-dimensional electron gases at high magnetic fields $B$, when the carrier densities of the two electron layers are matched. For filling factors $\nu<1$, there is a gap in the current-voltage…

凝聚态物理 · 物理学 2009-10-22 K. M. Brown , N. Turner , J. T. Nicholls , E. H. Linfield , M. Pepper , D. A. Ritchie , G. A. C. Jones

Utilizing Co/Al$_2$O$_3$/Co magnetic tunnel junctions (MTJs) with Co electrodes of different crystalline phases, a clear relationship between electrode structure and junction transport properties is presented. For junctions with one…

The investigation of the electronic properties of semiconductor surfaces using scanning tunnelling spectroscopy (STS) is often hindered by non-equilibrium transport of the injected charge carriers. We propose a correction method for the…

材料科学 · 物理学 2015-05-13 S. Modesti , H. Gutzmann , J. Wiebe , R. Wiesendanger
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