相关论文: Carrier diffusion in GaN -- a cathodoluminescence …

We investigate, both theoretically and experimentally, the drift, diffusion, and recombination of excitons in the strain field of an edge threading dislocation intersecting the GaN{0001} surface. We calculate and measure hyperspectral…

We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN(0001) surface in cathodoluminescence and electron-beam induced current maps. We consider exciton diffusion and recombination including…

The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of…

We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN$(000\bar{1})$ nanowires using photoluminescence spectroscopy under both…

We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum…

As fundamental one-dimensional defects, screw dislocations profoundly reshape the energy landscape and carrier dynamics of crystalline materials. By restoring the exact algebra of the screw dislocation group, we unveil the latent symmetry…

Photoluminescence measurements on high-quality InGaN quantum wells reveal that carriers diffuse laterally to long distances at room temperature, up to tens of microns. This behavior, which shows a pronounced dependence on the excitation…

We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band…

The strain field of a dislocation emerging at a free surface is partially relaxed to ensure stress free boundary conditions. We show that this relaxation strain at the outcrop of edge threading dislocations in GaN{0001} gives rise to a…

We demonstrate a nondestructive, high-throughput method for observing dislocations in GaN (0001) using phase-contrast microscopy (PCM). The PCM images (359x300 $\mu$m$^2$) analyzed in this study were acquired with an exposure time of 3 ms…

In this work, we study the impact that random alloy fluctuations have on the distribution of electrons and holes across the active region of a (In,Ga)N/GaN multi-quantum well based light emitting diode (LED). To do so, an atomistic…

We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly…

Quantum dot (QD) solids are being widely exploited as a solution-processable technology to develop photovoltaic, light-emission, and photo-detection devices. Charge transport in these materials is the result of a compromise between…

We have mesured the carrier recombination dynamics in InGaN/GaN multiple quantum wells over an unprecedented range in intensity. We find that at times shorter than 30\,ns, they follow an exponential form, and a power law at times longer…

It is shown that quantum effects play determining role in nitrogen adatom diffusion due to several different factors. This could be related to the change of the energy of the quantum states and also due to the redistribution of electrons…

The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si(1-x)Ge(x), and (0001) hexagonal…

In this paper, we present a coupled carrier-photon model that accounts for the time-domain interactions between carrier transport and light emission in Gallium Nitride (GaN)-based LEDs that hasn't been reported so far. Carrier transport is…

We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable…

We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a relatively high regime, we observed the emergence of…

This study investigates minority electron diffusion length and carrier recombination phenomena within p-type, 300 nm-thick Ga2O3 epitaxial films. Utilizing Electron Beam-Induced Current (EBIC) and Cathodoluminescence (CL) spectroscopy,…