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Transition metal dichalcogenide (TMD) bilayers with an interlayer twist exhibit a moire super-period, whose effects can manifest in both structural and electronic properties. Atomic displacements can lead to reconstruction into domains of…

材料科学 · 物理学 2025-10-23 Madeleine Phillips , C. Stephen Hellberg

Bilayer moir\'e structures have attracted significant attention recently due to their spatially modulated layer degrees of freedom. However, the layer-dependent transport mechanism in the moir\'e structures is still a problem to be…

介观与纳米尺度物理 · 物理学 2024-03-01 Chao-Jie Ren , Zhao Gong , Hui-Ying Mu , Xing-Tao An , Wang Yao , Jian-Jun Liu

In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the…

介观与纳米尺度物理 · 物理学 2021-07-01 F. Ferreira , V. V. Enaldiev , V. I. Fal'ko , S. J. Magorrian

Moir\'e superlattice systems such as transition metal dichalcogenide heterobilayers have garnered significant recent interest due to their promising utility as tunable solid state simulators. Recent experiments on a WSe$_2$/WS$_2$…

强关联电子 · 物理学 2022-12-14 Michael Matty , Eun-Ah Kim

In transition metal dichalcogenides (TMDCs), charge carriers have spin, pseudospin, and valley degrees of freedom associated with magnetic moments. The monolayers and bilayers of the TMDCs, in particular, MoS$_2$, lead strong couplings…

材料科学 · 物理学 2021-11-29 Yeon Lee , Dasol Kim , Dong Eon Kim , Alexis Chacón

Moir\'e superlattices serve as a playground for emerging phenomena, such as localization of band states, superconductivity, and localization of excitons. These superlattices are large and are often modeled in the zero angle limit, which…

材料科学 · 物理学 2022-06-01 Christopher Linderälv , Joakim Hagel , Samuel Brem , Ermin Malic , Paul Erhart

Moir\'e transition metal dichalcogenide (TMD) materials provide an ideal playground for studying the combined interplay of strong interactions and band-topology over a range of electronic fillings. Here we investigate the panoply of…

强关联电子 · 物理学 2024-11-22 Juan Felipe Mendez-Valderrama , Sunghoon Kim , Debanjan Chowdhury

Van der Waals materials enable the construction of atomically sharp interfaces between compounds with distinct crystal and electronic properties. This is dramatically exploited in moir\'e systems, where a lattice mismatch or twist between…

The $\sqrt{13}\times\sqrt{13}$ charge density wave state of the T polytype of MX$_2$ (M=Nb,Ta, X=S, Se) is known to host a half-filled flat band, which electronic correlations drive into a Mott insulating state. When T polytypes are coupled…

材料科学 · 物理学 2024-06-26 Irián Sánchez-Ramírez , Maia G. Vergniory , Fernando de Juan

The valence flat bands in transition metal dichalcogenide (TMD) heterobilayers are shown to exhibit strong intralayer spin-orbit coupling. This is reflected in a simple tight-binding model with spin-dependent complex hoppings based on the…

介观与纳米尺度物理 · 物理学 2022-06-01 Louk Rademaker

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) can withstand a large deformation without fracture or inelastic relaxation, making them attractive for application in novel strain-engineered and flexible…

材料科学 · 物理学 2016-01-18 Junwen Li , Nikhil V. Medhekar , Vivek B. Shenoy

Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30 degree twisted bilayer honeycomb lattice system, which possesses an incommensurate Moire pattern and…

材料科学 · 物理学 2019-12-19 Yu-Hao Shen , Wen-Yi Tong , He Hu , Jun-Ding Zheng , Chun-Gang Duan

Twisted homobilayer transition metal dichalcogenides - specifically twisted bilayer MoTe$_2$ and twisted bilayer WSe$_2$ - have recently emerged as a versatile platform for strongly correlated and topological phases of matter. These…

强关联电子 · 物理学 2026-03-10 Bohao Li , Wen-Xuan Qiu , Fengcheng Wu , A. H. MacDonald

This study examines the potential of superconductivity in transition metal (TM) intercalated bilayer graphene through a systematic study of the electronic and magnetic properties. We determine the electronic structure for all first row TM…

Transition metal dichalcogenide superlattices provide an exciting new platform for exploring and understanding a variety of phases of matter. The moir\'e continuum Hamiltonian, of two-dimensional jellium in a modulating potential, provides…

强关联电子 · 物理学 2024-02-16 Yubo Yang , Miguel Morales , Shiwei Zhang

We present a systematic theoretical study on the structural and electronic properties of twisted trilayer transition metal dichalcogenide (TMD) WSe$_2$, where two independent moir\'e patterns form between adjacent layers. Using a continuum…

介观与纳米尺度物理 · 物理学 2025-12-19 Naoto Nakatsuji , Takuto Kawakami , Hayato Tateishi , Koichiro Kato , Mikito Koshino

First-principle calculations with different exchange-correlation functionals, including LDA, PBE and vdW-DF functional in form of optB88-vdW, have been performed to investigate the electronic and elastic properties of two dimensional…

材料科学 · 物理学 2015-08-31 Fan Zeng , Wei-Bing Zhang , Bi-Yu Tang

We investigated metal-insulator transitions for double layer two-dimensional electron hole systems in transition metal dicalcogenides (TMDC) stacked on opposite sides of thin layers of boron nitride (BN). The interparticle interaction is…

介观与纳米尺度物理 · 物理学 2021-12-08 S. T. Chui , Ning Wang , B. Tanatar

Charge transfer is a common phenomenon in van der Waals heterostructures with proper work function mismatch, which enables electrostatic gating to control band alignment and interlayer charge distributions. This provides a tunable platform…

强关联电子 · 物理学 2026-01-16 Yanran Shi , Min Li , Xin Lu , Jianpeng Liu

We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene…

介观与纳米尺度物理 · 物理学 2013-09-12 Hannu-Pekka Komsa , Arkady V. Krasheninnikov