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相关论文: External control of GaN band bending using phospho…

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The strain of GaN layers grown by Metal Organic Chemical Vapor Deposition (MOCVD) on three vicinal 4H-SiC substrates (0, 3.4 and 8 offcut from [0001] towards [11-20] axis) is investigated by X-ray Diffraction (XRD), Raman Scattering and…

材料科学 · 物理学 2007-05-23 Julien Pernot , Etienne Bustarret , Mariusz Rudzinski , Paul R. Hageman , Poul K. Larsen

The small mass and atomic-scale thickness of graphene membranes make them highly suitable for nanoelectromechanical devices such as e.g. mass sensors, high frequency resonators or memory elements. Although only atomically thick, many of the…

Quantised lattice vibrations (i.e., phonons) in solids are robust and unambiguous fingerprints of crystal structures and of their symmetry properties. In metals and semimetals, strong electron-phonon coupling may lead to so-called Kohn…

Three different periodic optical metasurfaces exhibiting Fano resonances are studied in mid-IR frequency range in the presence of a substrate. We develop a rigorous semi-analytical technique and calculate how the presence of a substrate…

光学 · 物理学 2012-04-16 S. Hossein Mousavi , Alexander B. Khanikaev , Gennady Shvets

The Fano effect or Fano resonance with a characteristically asymmetric line shape originates from quantum interference between direct and indirect transition pathways in continuum-bound coupled systems, and is a ubiquitous phenomenon in…

量子物理 · 物理学 2019-02-13 Yuqing Li , Guosheng Feng , Jizhou Wu , Jie Ma , Bimalendu Deb , Arpita Pal , Liantuan Xiao , Suotang Jia

We describe a photogating effect in mono- and few-layer MoS2, which allows the control of the charge carrier density by almost two orders of magnitude without electrical contacts. Our Raman studies are consistent with physisorbed…

Graphene has shown great application opportunities in future nanoelectronic devices due to its outstanding electronic properties. Moreover, its impressive optical properties have been attracting the interest of researchers, and, recently,…

Following recently published study of Prezhdo and coworkers (JPC Letters, 2014, 5, 4129-4133), we report a systematic investigation of how monovalent and divalent ions influence valence electronic structure of graphene. Pure density…

材料科学 · 物理学 2014-12-10 Guilherme Colherinhas , Eudes Eterno Fileti , Vitaly V. Chaban

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing…

介观与纳米尺度物理 · 物理学 2015-05-30 Michele Esposto , Sriram Krishnamoorthy , Digbijoy N. Nath , Sanyam Bajaj , Ting-Hsiang Hung , Siddharth Rajan

We report a spin-coating-based approach for forming a percolatively connected graphene oxide (GO) nanosieve on SiO$_2$-patterned sapphire substrates, where the addition of tetrabutylammonium (TBA) to the GO solution significantly improves…

材料科学 · 物理学 2025-05-09 Gunhoon Beak , Changwook Dong , Minah Choi , Jieun Yang , Joonwon Lim , Chinkyo Kim

Using hybrid exchange-correlation functional in ab initio density functional theory calculations, we study magnetic properties and strain effect on the electronic properties of $\alpha$-graphyne monolayer. We find that a spontaneous…

计算物理 · 物理学 2018-02-08 Baojuan Dong , Huaihong Guo , Zhiyong Liu , Teng Yang , Peng Tao , Sufang Tang , Riichiro Saito , Zhidong Zhang

The functionalized graphene sheets (FGS)-polyacrylamide (PAM) composite films have been prepared by solution cast technique. The FGS have been synthesized by thermal exfoliation of graphite oxide. Several composites with different weight %…

介观与纳米尺度物理 · 物理学 2010-04-27 Ratnesh Pandey , Kalpana Awasthi , R. S. Tiwari , O. N. Srivastava

Photoresponse of Au nanoparticle functionalized semiconducting GaN (Au-GaN) nanowires is reported for an optical switching using 532 excitation. Wide band gap GaN nanowires are grown by catalyst assisted chemical vapour deposition technique…

材料科学 · 物理学 2015-09-01 Sandip Dhara , Chien-Yao Lu , Kuei-Hsien Chen

Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical cells. The cell performance can be greatly limited by the…

In this paper we show how to link the electronic structures of two III-V systems, one a direct gap material, GaAs, and the other an indirect gap material, GaP, from their bulks right down to the shape of thin nanowires. GaAs and GaP bulk…

介观与纳米尺度物理 · 物理学 2018-08-10 Claudia Lange dos Santos , Paulo Piquini , Rita Magri

We use an atomistic approach to study the electronic properties of monolayer and bilayer black phosphorus in the vicinity of a charged defect. In particular, we combine screened defect potentials obtained from first-principles linear…

材料科学 · 物理学 2021-12-21 Martik Aghajanian , Arash A. Mostofi , Johannes Lischner

The control of nanostructuration of graphene and graphene related materials (GRM) into self-assembled structures is strictly related to the nanoflakes chemical functionalization, which may be obtained via covalent grafting of non-covalent…

应用物理 · 物理学 2019-10-31 Matteo Eleuteri , Mar Bernal , Marco Milanesio , Orietta Monticelli , Alberto Fina

We present a comprehensive study on the structure and optical properties of Mn-and Co-doped ZnO samples prepared via solid-state reaction method with different dopant concentrations and atmospheres. The samples were structural and…

The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of…

UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO…

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