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We present a theoretical approach to describing the Mott transition of electrons on a two dimensional lattice that begins with the low energy effective theory of the Fermi liquid. The approach to the Mott transition must be characterized by…

强关联电子 · 物理学 2012-01-25 David F. Mross , T. Senthil

In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band…

强关联电子 · 物理学 2015-08-20 Masanori Kohno

We present a formulation of quantum molecular dynamics that includes electron correlation effects via the Gutzwiller method. Our new scheme enables the study of the dynamical behavior of atoms and molecules with strong electron…

强关联电子 · 物理学 2017-06-05 Gia-Wei Chern , Kipton Barros , Cristian D. Batista , Joel D. Kress , Gabriel Kotliar

The Mott metal-insulator transition-a drastic manifestations of Coulomb interactions among electrons-is the first-order transition of clear discontinuity, as shown by various experiments and the celebrated dynamical mean-field theory.…

强关联电子 · 物理学 2018-03-01 Tetsuya Furukawa , Kazuhiko Kobashi , Yosuke Kurosaki , Kazuya Miyagawa , Kazushi Kanoda

The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…

The main flaw of the well-known Brinkman-Rice description, obtained through the Gutzwiller approximation, of the paramagnetic Mott transition in the Hubbard model is in neglecting high-energy virtual processes that generate for instance the…

强关联电子 · 物理学 2018-01-03 Marcin M. Wysokinski , Michele Fabrizio

Using the strong coupling diagram technique a self-consistent equation for the electron Green's function is derived for the repulsive Hubbard model. Terms of two lowest orders of the ratio of the bandwidth $\Delta$ to the Hubbard repulsion…

强关联电子 · 物理学 2019-05-21 A. Sherman

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

An intuitive interpretation of the relationship between the dispersion relation of the single-particle excitation in a metal and that of the spin excitation in a Mott insulator is presented, based on the results for the one- and…

强关联电子 · 物理学 2014-07-14 Masanori Kohno

We investigate the role of the bandwidth difference in the Mott metal-insulator transition of a two-band Hubbard model in the limit of infinite dimensions, by means of a Gutzwiller variational wave function as well as by dynamical…

强关联电子 · 物理学 2007-05-23 Michel Ferrero , Federico Becca , Michele Fabrizio , Massimo Capone

Effects of the electron-electron interaction in the two-dimensional flux phase are investigated. We treat the half-filled Hubbard model with a magnetic flux $\pi$ per plaquette by the quantum Monte Carlo method. When the interaction is…

强关联电子 · 物理学 2009-11-07 Y. Otsuka , Y. Hatsugai

Quasiparticle properties are explored in an effective theory of the $t-J$ model which includes two important components: spin-charge separation and unrenormalizable phase shift. We show that the phase shift effect indeed causes the system…

强关联电子 · 物理学 2009-10-31 Z. Y. Weng , D. N. Sheng , C. S. Ting

Landau suggested that the low-temperature properties of metals can be understood in terms of long-lived quasiparticles with all complex interactions included in Fermi-liquid parameters, such as the effective mass $m^{\star}$. Despite its…

Systematic pressure- and temperature-dependent infrared studies on the two-dimensional organic quantum spin-liquid $\beta^{\prime}$-EtMe$_3$Sb[Pd(dmit)$_2$]$_2$ disclose the electronic and lattice evolution across the Mott insulator-metal…

强关联电子 · 物理学 2019-03-27 Weiwu Li , Andrej Pustogow , Reizo Kato , Martin Dressel

We investigate the effect of mass imbalance in binary Fermi mixtures loaded in optical lattices. Using dynamical mean-field theory, we study the transition from a fluid to a Mott insulator driven by the repulsive interactions. For almost…

强关联电子 · 物理学 2012-01-11 T. -L. Dao , M. Ferrero , P. S. Cornaglia , M. Capone

We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The…

强关联电子 · 物理学 2008-05-30 Philip Phillips , Ting-Pong Choy , Robert G. Leigh

Filling-control metal-insulator transition on the two-dimensional Hubbard model is investigated by using the correlator projection method, which takes into account momentum dependence of the free energy beyond the dynamical mean-field…

强关联电子 · 物理学 2007-05-23 Kota Hanasaki , Masatoshi Imada

We consider the interaction-driven Mott transition at zero temperature from the viewpoint of microscopic Fermi liquid theory. To this end, we derive an exact expression for the Landau parameters within the dynamical mean-field theory (DMFT)…

The Hubbard model in the strong-coupling regime is mainly studied by Kondo-lattice theory or 1/d expansion theory, with d the spatial dimensionality. In two dimensions and higher, the ground state within the Hilbert subspace with no order…

强关联电子 · 物理学 2007-07-03 Fusayoshi J. Ohkawa

Spectral properties of the two-dimensional Hubbard model near the Mott transition are investigated by using cluster perturbation theory. The Mott transition is characterized by freezing of the charge degrees of freedom in a single-particle…

强关联电子 · 物理学 2012-02-28 Masanori Kohno
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