相关论文: Thickness identification of thin InSe by optical m…
We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with…
The ultrathin nature and dangling bonds free surface of two-dimensional (2D) semiconductors allow for significant modifications of their band gap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched,…
Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices…
In this paper, a thin film thickness gauge based on the interferometric principle of Y-shaped optical fiber is proposed to achieve accurate measurement of film thickness. In this paper, the optical fiber, the interferometric principle and…
Selenium is a crucial earth-abundant and non-toxic semiconductor with a wide range of applications across the semiconductor industries. Selenium has drawn attention from scientific communities for its wide range of applicability: from…
We show that it is possible to deposit, by mechanical exfoliation on SiO2/Si wafers, atomically thin mica flakes down to a single monolayer thickness. The optical contrast of these mica flakes on top of a SiO2/Si substrate, which depends on…
Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using…
Sample thickness is an important parameter in transmission electron microscopy (TEM) imaging, for interpreting image contrast and understanding the relationship between properties and microstructure. In this study, we introduce a method for…
Van der Waals (vdW) superconductors remain superconducting down to the monolayer limit, enabling the exploration of emergent physical phenomena and functionality driven by reduced dimensionality. Here, we report the characterization of the…
In this paper, we propose a technique named reflection F-scan or RF-scan, that can be used to measure the nonlinear-refractive index n_2 of thin-film semiconductors. In this technique, a p-polarized Gaussian beam is focused using an…
Identification of the mechanically exfoliated graphene flakes and classification of the thickness is important in the nanomanufacturing of next-generation materials and devices that overcome the bottleneck of Moore's Law. Currently,…
A method of scanning mid-IR-laser microscopy has recently been proposed for the investigation of large-scale electrically and recombination-active defects in semiconductors and non-destructive inspection of semiconductor materials and…
When the thickness of the layer is smaller than the electrons mean free path, the morphology affects the conductivity directly based on the layer thickness. This issue provides basis in order to estimate the thickness of the layer by…
Optical reflectivity contrast provides a simple, fast and noninvasive method for characterization of few monolayer samples of two-dimensional materials. Here we apply this technique to measure the thickness of thin flakes of hexagonal Boron…
Due to the strong quantum confinement effect, few-layer {\gamma}-InSe exhibits a layer-dependent bandgap, spanning the visible and near infrared regions, and thus recently draws tremendous attention. As a two-dimensional material, the…
We report a study of long-range MoS2-substrate interaction using resonant Raman imaging. We observed a strong thickness-dependent peak shift of a Raman-forbidden mode that can be used as a new method of determining the thickness of…
3R-MoS2, a MoS2 polytype with broken inversion symmetry, enables unique light-matter interactions and is promising for linear and nonlinear integrated photonics beyond the monolayer limit. Yet, systematic studies of its thickness-dependent…
A new approach was proposed to accurately determine the thickness of film, especially for ultra-thin film, through spectrum fitting with the assistance of interference layer. The determination limit can reach even less than 1 nm. Its…
We analyze the transparency of a thin film of low refractive index (an optical glue or a bonding layer) placed between higher-index media and forming an opto-pair. Examples include a semiconductor light-emitting diode with attached lens or…
Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 ${\mu}$m. Multilayered platinum diselenide (PtSe$_2$) is a…