相关论文: Stochastic processes in magnetization reversal inv…

Computational and experimental results on the thermally-induced magnetization reversal in single-domain magnetic nanoparticles are reported. The simulations are based on the direct integration of the Fokker-Planck equation that governs the…

We determine magnetoresistance effects in stable and clean permalloy nanocontacts of variable cross-section, fabricated by UHV deposition and in-situ electromigration. To ascertain the magnetoresistance (MR) effects originating from a…

In this paper, we study the domain wall motion induced by vertical current flow in asymmetric magnetic tunnel junctions. The domain wall motion in the free layer is mainly dictated by the current-induced field-like torque acting on it. We…

Chirality as internal degree of freedom of a mesoscopic domain wall inside a quasi-one-dimensional fixture can be controlled by spin-polarized current for ferro- as well as anti-ferro-magnetic domain walls. We show that the current density…

The dynamics of a multiferroic domain wall in which an electric field can couple to the magnetization via inhomogeneous magnetoelectric interaction is investigated by the collective-coordinate framework. We show how the electric field is…

Magnetic domain walls are objects whose dynamics is inseparably connected to their structure. In this work we investigate magnetic bilayers, which are engineered such that a coupled pair of domain walls, one in each layer, is stabilized by…

Slow magnetic relaxation and two level fluctuations measurements under high current injection is performed in single-contacted ferromagnetic nanostructures. The magnetic configurations of the samples are described by two metastable states…

Electronic transport through thin and laterally constrained domain walls in ferromagnetic nanojunctions is analyzed theoretically. The description is formulated in the basis of scattering states. The resistance of the domain wall is…

A stochastic differential equation that describes the dynamics of single-domain magnetic particles at any temperature is derived using a classical formalism. The deterministic terms recover existing theory and the stochastic process takes…

We report the use of Lorentz microscopy to observe the domain wall structure during the magnetization process in FePd thin foils. We have focused on the magnetic structure of domain walls of bubble-shaped magnetic domains near saturation.…

The future developments of three-dimensional magnetic nanotechnology require the control of domain wall dynamics by means of current pulses. While this has been extensively studied in planar magnetic strips (planar nanowires), few reports…

A domain wall in a ferromagnetic one-dimensional nanowire experiences current induced motion due to its coupling with the conduction electrons. When the current is not sufficient to drive the domain wall through the wire, or it is confined…

The precise manipulation of transverse magnetic domain walls in finite/infinite nanowires with artificial defects under the influence of very short spin-polarized current pulses is investigated. We show that for a classical $3d$ ferromagnet…

Quantum systems have shown great promise for precision metrology thanks to advances in their control. This has allowed not only the sensitive estimation of external parameters but also the reconstruction of their temporal profile. In…

Ultrafast dynamics of antiferromagnetic materials is an appealing feature for novel spintronic devices. Several experiments have shown that both, the static states and the dynamical behavior of the antiferromagnetic order, are strictly…

We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase…

For viable applications, spintronic devices based e.g. on domain wall motion need to be highly reliable with stable magnetization states and highly reproducible switching pathways transforming one state to another. The existence of multiple…

Achieving high velocities of magnetic domain walls is a crucial factor for their use as information carriers in modern nanoelectronic applications. In nanomagnetism and spintronics, these velocities are often limited either by internal…

The interplay between intrinsic and surface/interface-induced magnetic anisotropies strongly in- fluences magnetization processes in nanomagnetic systems. We develop a micromagnetic theory to describe the field-driven reorientation in…

Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…