相关论文: Native Defects in Antiferromagnetic Topological In…
The recently discovered antiferromagnetic (AFM) topological insulator (TI) MnBi2Te4 represents a versatile material platform for exploring exotic topological quantum phenomena in nanoscale devices. It has been proposed that…
Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering…
The interface of two materials can harbor unexpected emergent phenomena. One example is interface-induced superconductivity. In this work, we employ molecular beam epitaxy to grow a series of heterostructures formed by stacking together two…
The ferromagnetic and antiferromagnetic nanostructure are crucial for fundamental spintronics devices, motivated by its potential application in spintronics, we theoretically investigate the electronic structure of the ferromagnetic and…
We report a new member of topological insulator (TI) family i.e., Mn$_2$Sb$_2$Te$_5$, which belongs to MnSb$_2$Te$_4$ family and is a sister compound of Mn$_2$Bi$_2$Te$_5$. An antiferromagnetic layer of (MnTe)$_2$ has been inserted between…
Absence of backscattering and occurrence of weak anti-localization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance…
We report a high frequency/high magnetic field electron spin resonance (HF-ESR) spectroscopy study in the sub-THz frequency domain of the two representatives of the family of magnetic topological insulators…
The \emph{p}-type Bi$_{2}$Se$_{3}$ is much desirable as a promising thermoelectric material and topological insulator, while the naturally grown Bi$_{2}$Se$_{3}$ is always \emph{n}-type doped by native point defects. Here we use…
MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to…
Bi2O2Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS2 and phosphorene in electron mobility and rivalling typical Van der Waals stacked…
$\mathrm{MnBi_2Te_4}$ has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator and predicted to be an ideal platform to realize quantum anomalous Hall (QAH) insulator and axion insulator states. We…
The layered topological insulator MnBi$_2$Te$_4$ has attracted great interest recently due to its intrinsic antiferromagnetic order, potentially hosting various topological phases. By temperature-dependent infrared spectroscopy over a broad…
The metastable layered compound MnBi2Te4 is the first experimentally realized intrinsic antiferromagnetic topological insulator, predicted to host the quantum anomalous Hall effect at high temperatures upon exfoliation to atomically thin…
We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect becomes manifested as a missing X-ray magnetic circular dichroism for resonant L3,2 transitions into…
We report on infrared (IR) optical experiments on Bi$_2$Te$_3$ and Mn-doped Bi$_2$Te$_3$ epitaxial thin films. In the latter film, dilute Mn doping (4.5\%) of the topologically nontrivial semiconductor host results in…
Magnetic topological insulators can host chiral 1D edge channels at zero magnetic field, when a magnetic gap opens at the Dirac point in the band structure of 2D topological surface states, leading to the quantum anomalous Hall effect in…
Through a thorough magneto-transport study of antiferromagnetic topological insulator MnBi2Te4 (MBT) thick films, a positive linear magnetoresistance (LMR) with a two-dimensional (2D) character is found in high perpendicular magnetic fields…
The recently discovered antiferromagnetic topological insulator MnBi$_2$Te$_4$ hosts a variety of exotic topological quantum phases such as the axion insulator and Chern insulator states. Here we report systematic gate voltage dependent…
MnBi2Te4(MBT) is a promising van der Waals layered antiferromagnetic (AF) topological insulator that combines a topologically non-trivial inverted Bi-Te band gap with ferromagnetic (FM) layers of Mn ions. We perform inelastic neutron…
MnBi$_2$Te$_4$ (MBT) is an ideal platform for studying the interplay between magnetism and topology. Many exotic topological phenomena, such as the quantum anomalous Hall effect and the axion insulator, have been observed in few-layer MBT.…