相关论文: Probing efficient n-type lanthanide dopants for Mg…

Doping is considered to be the main method for improving the thermoelectric performance of layered sodium cobaltate (Na$_{1-x}$CoO$_2$). However, in the vast majority of past reports, the equilibrium location of the dopant in the…

The temperature dependence of the London penetration depth $\Delta\lambda(T)$ in the superconducting doped topological crystalline insulator Sn$_{1-x}$In$_x$Te was measured down to 450 mK for two different doping levels, x $\approx$ 0.45…

The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demonstrate vertical devices. This paper presents the first…

Mono- and few-layer transition-metal dichalcogenides (TMDCs) provide opportunities for ideal two-dimensional semiconductors for electronic and optoelectronic devices. For electronic devices on TMDCs, it is essential to incorporate n- and/or…

Pressure dependence of electronic structures and thermoelectric properties of $\mathrm{Mg_2Sn}$ are investigated by using a modified Becke and Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC). The corresponding value of…

On the basis of density functional theory (DFT) calculations thermoelectric properties are derived for Sb-doped skutterudites MPt$_4$Ge$_{12-x}$Sb$_x$ with M=Ba,La,Th. It is predicted that the originally very small absolute values of…

We present a theoretical study of (Ga,Mn)(As,C) diluted magnetic semiconductors with high C acceptor density that combines insights from phenomenological model and microscopic approaches. A tight-binding coherent potential approximation is…

We report an investigation of temperature- and doping-dependent thermoelectric behaviors of topological semimetal Cd3As2. The electrical conductivity, thermal conductivity, Seebeck coefficient, and figure of merit (ZT) are calculated by…

Modifying the optoelectronic properties of nanostructured materials through introduction of dopant atoms has attracted intense interest. Nevertheless, the approaches employed are often trial and error, preventing rational design. We…

This work investigates how site-specific doping can enhance the thermoelectric performance of tetragonal Cu$_{2}$S using Density functional Theory and Projected Atomic Orbital Framework for Electronic Transport. We address the gap in…

Diamond is an outstanding semiconductor for extreme electronics, yet reproducible n-type doping remains a long-standing challenge. Here we demonstrate stable n-type single-crystal diamond grown in a single step by a precisely controlled…

SrTiO$_3$ exhibits a superconducting dome upon doping with Nb, with a maximum critical temperature \mbox{$T_\mathrm{c} \approx 0.4$~K}. Using microwave stripline resonators at frequencies from 2 to 23~GHz and temperatures down to 0.02~K, we…

Based on ab initio calculations of Ga_{1-x}Mn_xN_yAs_{1-y} and Ga_{1-x}Mn_xC_yAs_{1-y}, we propose a new codoping method to enhance the Curie temperature T_c of diluted magnetic semiconductors. The solubility of Mn can be increased up to…

Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoelectronic devices. Knowledge of the dopant incorporation and…

The magnetic and electronic properties of the magnetically doped topological insulator Bi$_{\rm 2-x}$Mn$_{\rm x}$Te$_3$ were studied using electron spin resonance (ESR) and measurements of static magnetization and electrical transport. The…

In the iron-based high-Tc bulk superconductors, Tc above 50K was only observed in the electron-doped 1111-type compounds. Here we revisit the electron-doped SmFeAsO polycrystals to make a further investigation for the highest T-c in these…

In this work, thermoelectric properties of Al$_{1.2}$Fe$_2$B$_2$ compound were investigated over a temperature range from 300\,K to 773\,K. Al$_{1.2}$Fe$_2$B$_2$ compound was produced by vacuum arc melting of Al, Fe, and B followed by…

Doping of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of…

Graphene has been widely studied for various applications due to its outstanding electrical and mechanical properties. However, its potential in thermoelectric applications has been limited by a low Seebeck coefficient and high thermal…

We examined doping effect of 3d transition metal elements (TM: Cr, Mn, Co, Ni, and Cu) at the Fe site of a quaternary fluoroarsenide CaFeAsF, an analogue of 1111-type parent compound LaFeAsO. The anomaly at ~120 K observed in resistivity…