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Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the…

介观与纳米尺度物理 · 物理学 2024-12-17 Keshari Nandan , Ateeb Naseer , Amit Agarwal , Somnath Bhowmick , Yogesh S. Chauhan

Bi2O2Se belongs to a group of quasi-2D semiconductors that can replace silicon in future high-speed/low-power electronics. However, the correlation between crystal/band structure and other physical properties still eludes understanding:…

Hydrogen-based compounds under ultra-high pressure, such as the polyhydrides H$_3$S and LaH$_{10}$, superconduct through the conventional electron-phonon coupling mechanism to attain the record critical temperatures known to date. We…

超导电性 · 物理学 2019-08-21 Jonas Bekaert , Mikhail Petrov , Alex Aperis , Peter M. Oppeneer , Milorad V. Milosevic

The Hall scattering factor is formulated using Rode's iterative approach to solving the Boltzmann transport equation in such a way that it may be easily computed within the scope of ab-inito calculations. Using this method in conjunction…

Stacking monolayer semiconductors results in moir\'e patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate…

We calculated the longitudinal acoustic phonon limited electron mobility of 14 two dimensional semiconductors with composition of MX$_2$, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the…

材料科学 · 物理学 2015-05-22 Wenxu Zhang , Zhishuo Huang , Wanli Zhang

Phonon size effects induce ballistic transport in nanomaterials, challenging Fourier's law. Nondiffusive heat transport is captured by the Peierls-Boltzmann transport equation (BTE), commonly solved under the relaxation time approximation…

介观与纳米尺度物理 · 物理学 2020-03-10 Giuseppe Romano

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic…

The performance of electronic and spintronic devices based on two-dimensional semiconductors (2D SC) is largely dependent on the quality and resistance of the metal/SC electrical contacts, as well as preservation of the intrinsic properties…

介观与纳米尺度物理 · 物理学 2019-05-14 Talieh S. Ghiasi , Jorge Quereda , Bart J. van Wees

The study of phonon coupling in doped semiconductors via electrical transport measurements is challenging due to unwanted temperature-induced effects such as dopant ionisation and parallel conduction. Here, we study phonon scattering in 2D…

介观与纳米尺度物理 · 物理学 2025-03-03 Y. Ashlea Alava , K. Kumar , C. Harsas , P. Mehta , P. Hathi , C. Chen , D. A. Ritchie , A. R. Hamilton

We use density functional theory to calculate the electronic band structures, cohesive energies, phonon dispersions, and optical absorption spectra of two-dimensional In$_2$X$_2$ crystals, where X is S, Se, or Te. We identify two…

介观与纳米尺度物理 · 物理学 2014-09-19 V. Zolyomi , N. D. Drummond , V. I. Fal'ko

Two-dimensional (2D) semiconducting materials are promising building blocks for optoelectronic applications, many of which require efficient dissociation of excitons into free electrons and holes. However, the strongly bound excitons…

This paper presents an ab initio methodology to account for electron-phonon interactions in 2D materials, focusing on transition metal dichalcogenides (TMDCs). It combines density functional theory and maximally localized Wannier functions…

介观与纳米尺度物理 · 物理学 2023-12-04 Jonathan Backman , Youseung Lee , Mathieu Luisier

With the miniaturization and integration of nanoelectronic devices, efficient heat removal becomes a key factor affecting the reliable operation of the nanoelectronic device. With the high intrinsic thermal conductivity, good mechanical…

材料科学 · 物理学 2022-02-16 Chen Shen , Lei Wang , Donghai Wei , Yixuan Zhang , Guangzhao Qin , Xing-Qiu Chen , Hongbin Zhang

The half-Heusler (hH) compounds are currently considered promising thermoelectric (TE) materials due to their favorable thermopower and electrical conductivity. Accurate estimates of these properties are therefore highly desirable and…

材料科学 · 物理学 2026-04-07 Vinod Kumar Solet , Sudhir K. Pandey

A new two-dimensional material { Mg2B4C2, belonging to the family of the conventional superconductor MgB2, is theoretically predicted to exhibit superconductivity with critical temperature Tc estimated in the 47-48 K range (predicted using…

Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine…

介观与纳米尺度物理 · 物理学 2018-04-24 K. L. Chiu

The beginning of high interest in two-dimensional (2D) crystals is marked by the synthesis of graphene, which constitutes exemplary monolayer material. This is due to the multiple extraordinary properties of graphene, particularly in the…

介观与纳米尺度物理 · 物理学 2025-02-21 Dominik Szczȩśniak , Jakub T. Gnyp , Marta Kielak

Novel quasi two dimensional typically layered semimetals offer a unique opportunity to control the density and even the topology of the electronic matter. In intercalated MoTe2 type II Weyl semimetal the tilt of the dispersion relation…

超导电性 · 物理学 2023-01-23 Baruh Rosenstein , B. Ya. Shapiro

Engineering thermal transport in two dimensional materials, alloys and heterostructures is critical for the design of next-generation flexible optoelectronic and energy harvesting devices. Direct experimental characterization of lattice…