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Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…

Understanding of electron-phonon coupling (EPC) in two dimensional (2D) materials manifesting as phonon renormalization is essential to their possible applications in nanoelectronics. Here we report in-situ Raman measurements of…

Here, we have identified the monolayer phase of Bi2O2Se as a promising two-dimensional semiconductor with ultra-high carrier mobility and giant electric polarization. Due to the strong reconstruction originated from the interlayer…

We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials…

介观与纳米尺度物理 · 物理学 2015-07-24 X. Mi , T. M. Hazard , C. Payette , K. Wang , D. M. Zajac , J. V. Cady , J. R. Petta

Transition metal dichalcogenides have recently emerged as promising two-dimensional materials with intriguing electronic properties. Existing calculations of intrinsic phonon-limited electronic transport so far have concentrated on the…

材料科学 · 物理学 2017-10-05 Nicki Frank Hinsche , Kristian Sommer Thygesen

Molybdenum disulfide (MoS$_2$) is a promising material for making two-dimensional crystals and flexible electronic and optoelectronic devices at the nanoscale. MoS$_2$ flakes can show high mobilities and have even been integrated in…

材料科学 · 物理学 2015-06-15 Mohamed Boukhicha , Matteo Calandra , Marie-Aude Measson , Ophelie Lancry , Abhay Shukla

To explore the thermal and thermoelectric potential of 2D materials, we study the h-NbN monolayer, which lacks mirror symmetry and features a large acoustic-optical phonon gap and quadratic flexural mode. First-principles calculations and…

材料科学 · 物理学 2025-11-17 Himanshu Murari , Subhradip Ghosh , Mukul Kabir , Ashis Kundu

Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…

介观与纳米尺度物理 · 物理学 2007-10-09 E. H. Hwang , S. Adam , S. Das Sarma

The extraordinary properties of two dimensional (2D) materials, such as the extremely high carrier mobility in graphene and the large direct band gaps in transition metal dichalcogenides MX2 (M = Mo or W, X = S, Se) monolayers, highlight…

Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-\k{appa} dielectrics that fully meet…

Understanding the fundamental link between structure and functionalization is crucial for the design and optimization of functional materials, since different structural configurations could trigger materials to demonstrate diverse…

材料科学 · 物理学 2024-01-30 Linfeng Yu , Kexin Dong , Qi Yang , Yi Zhang , Xiong Zheng , Huimin Wang , Zhenzhen Qin , Guangzhao Qin

Understanding the origin of superconductivity in correlated two-dimensional materials is a key step in leveraging material engineering techniques for next-generation nanoscale devices. The recent demonstration of superconductivity in Bernal…

The thermoelectric transport coefficients of electrons in two recently emerged transition metal dichalcogenides(TMD), MoS2 and WSe2, are calculated by solving Boltzmann Transport equation and coupled electrical and thermal current equations…

材料科学 · 物理学 2015-10-28 Krishnendu Ghosh , Uttam Singisetti

Two dimensional materials are attracting new research for optoelectronics and spintronics due to their unique physical properties. A wide range of emerging spintronic devices are achieved from parent and doped two dimensional materials.…

材料科学 · 物理学 2023-09-15 S. Koley

We present a systematic investigation of superconductivity in a topological superconductor candidate $T_{\rm d}$-MoTe$_2$ in the few-layer limit. By examining multiple mechanically exfoliated samples with different thicknesses, substrates…

We calculated the electron mobility of 14 two dimensional semiconductors with composition of MX$_2$, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by deformation…

材料科学 · 物理学 2016-10-04 Zhishuo Huang , Wenxu Zhang , Wanli Zhang , Yanrong Li

Electronic correlations could have significant impact on the material properties. They are typically pronounced for localized orbitals and enhanced in low-dimensional systems, so two-dimensional (2D) transition metal compounds could be a…

材料科学 · 物理学 2021-09-01 Si Li , Qianqian Wang , Chunmei Zhang , Ping Guo , Shengyuan A. Yang

Monolayers of semiconducting transition metal dichalcogenides are two-dimensional direct-gap systems which host tightly-bound excitons with an internal degree of freedom corresponding to the valley of the constituting carriers. Strong…

Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic…

Considering the rapid development of experimental techniques for fabricating 2D materials in recent years, various monolayers are expected to be experimentally realized in the near future. Motivated by the recent research activities focused…

材料科学 · 物理学 2018-11-26 Pooja Jamdagni , Anil Thakur , Ashok Kumar , P. K. Ahluwalia , Ravindra Pandey