相关论文: Depth-Dependent EBIC Microscopy of Radial-Junction…

Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of…

We have developed a novel fabrication process for ultra-small, full-epitaxial NbN Josephson junctions on a silicon (Si) substrate. A full-epitaxial NbN/AlN/NbN tri-layer was grown on a Si (100) wafer with a (200)-oriented TiN buffer layer.…

The present investigation reports on the fabrication and characterization of heterojunctions based on in situ Eu doped CdO layers, which were deposited on p-type silicon using the plasma assisted molecular beam epitaxy (PA MBE) method. The…

Nanowire devices have long been proposed as an efficient alternative to their planar counterparts for different optoelectronic applications. Unfortunately, challenges related to the growth and characterization of doping and p-n junction…

Emerging 3D chips stacking and MEMS/Sensors packaging technologies are using DRIE (Deep Reactive Ion Etching) to etch through-silicon via (TSV) for advanced interconnections. The interconnection step can be done prior to or post CMOS…

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast…

Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…

In this work, a single crystal CVD diamond film with a novel three-dimensional (3D) interdigitated electrode geometry has been fabricated with the Reactive Ion Etching (RIE) technique in order to increase the charge collection efficiency…

Deep reactive ion etching (DRIE) with the Bosch process is one of the key procedures used to manufacture micron-sized structures for MEMS and microfluidic applications in silicon and, hence, of increasing importance for miniaturization in…

Recent progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-quality micropillar arrays for various optoelectronic applications. Si micropillars produced by MACE often show a porous Si/SiOx shell on…

The Electron-Ion Collider (EIC) will be the next frontier project of nuclear physics in the United States. It is planned to be built in the Brookhaven National Laboratory (BNL) in close collaboration with Jefferson Lab. One of the key…

We introduce an ion trap platform based on a 3D-printed micro-junction array, designed to implement quantum charge-coupled device (QCCD) architectures for large-scale quantum information processing (QIP). The integration of…

Structuring Si in arrays of vertical high aspect ratio pillars, ranging from nanoscale to macroscale feature dimensions, is essential for producing functional interfaces for many applications. Arrays of silicon 3D nanostructures are needed…

Electron beam-induced current (EBIC) imaging in the scanning transmission electron microscope (STEM), STEM-EBIC, provides direct access to carrier transport at the nanoscale. While well established in bulk SEM geometries, its application to…

Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to…

Fabrication of porous GaN distributed Bragg reflectors (DBRs) via the selective electrochemical etching (ECE) of conductive Si-doped layers, separated by non-intentionally doped (NID) layers, provides a straightforward methodology for…

Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the $p$-$n$ junction…

Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Ideally, an EBIC measurement reflects the spatially resolved quantum…

Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (\b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanical exfoliation process, which is described in detail, is…