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相关论文: Modeling Resistive Switching in Nanogranular Metal…

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Metallic nanogranular films display a complex dynamical response to a constant bias, showing up as atypical resistive switching mechanism which could be used to create electrical components for neuromorphic applications. To model such a…

材料科学 · 物理学 2022-10-19 Miquel López-Suárez , Claudio Melis , Luciano Colombo , Walter Tarantino

We report on the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in cluster-assembled nanostructured gold films above the electrical percolation and in…

介观与纳米尺度物理 · 物理学 2020-05-18 M. Mirigliano , S. Radice , A. Falqui , A. Casu , F. Cavaliere , P. Milani

Cluster-assembled metallic films show interesting electrical properties, both in the near-to-percolation regime, when deposited clusters do not form a complete layer yet, and when the film thickness is well above the electrical percolation…

介观与纳米尺度物理 · 物理学 2021-12-20 Miquel López-Suárez , Claudio Melis , Luciano Colombo , Walter Tarantino

A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness…

介观与纳米尺度物理 · 物理学 2017-01-26 Kristof Moors , Bart Sorée , Wim Magnus

Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…

介观与纳米尺度物理 · 物理学 2012-06-14 Marcus Wu Shihong , Themistoklis Prodromakis , Iulia Salaoru , Christofer Toumazou

Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…

材料科学 · 物理学 2014-12-08 Xiang Yang

Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…

The great practical utility has motivated extensive efforts to discover ultra-low resistance electrical conductors and superconductors in ambience. Here we report the observation of vanishingly small electrical resistance at the ambient…

We analyze the temperature dependence of conductivity in thick granular ferromagnetic compounds NiSiO2 and in thin weakly coupled films of Fe, Ni and Py in vicinity of metal-insulator transition. Development of resistivity minimum followed…

无序系统与神经网络 · 物理学 2016-09-23 A. Gerber , I. Kishon , D. Bartov , M. Karpovski

A number of evidences suggests that thick-film resistors are close to a metal-insulator transition and that tunneling processes between metallic grains are the main source of resistance. We consider as a minimal model for description of…

无序系统与神经网络 · 物理学 2009-11-07 C. Grimaldi , P. Ryser , S. Straessler

Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium…

The effect of electrical resistivity switching in nanographite films is described. In difference with cases published elsewhere the switching in nanographite films occurs from stable high conductive to metastable low conductive state.…

介观与纳米尺度物理 · 物理学 2016-06-29 Sergey G. Lebedev

Nanogranular metal composites, consisting of immiscible metallic and insulating phases deposited on a substrate, are characterized by two distinct electronic transport regimes depending on the relative amount of the metallic phase. At…

无序系统与神经网络 · 物理学 2014-06-20 C. Grimaldi

Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…

应用物理 · 物理学 2020-04-27 Beatriz Martín-García , Davide Spirito , Roman Krahne , Iwan Moreels

We report on the optical characterization of semicontinuous nanostructured silver films exhibiting tunable optical reflectance asymmetries. The films are obtained using a multi-step process, where a nanocrystalline silver film is first…

光学 · 物理学 2015-05-20 Aiqing Chen , Miriam Deutsch

A simple and predictive model is put forward explaining the experimentally observed substantial shift of the glass transition temperature, Tg, of sufficiently thin polymer films. It focuses on the limit of small molecular weight, where…

软凝聚态物质 · 物理学 2009-11-07 Stephan Herminghaus , Karin Jacobs , Ralf Seemann

Metallic nanostructures can support so-called plasma oscillations (plasmons). Plasmons allow for the concentration of the energy from light, down to sizes well below the conventional diffraction limit known from optics. Plasmonics thus…

介观与纳米尺度物理 · 物理学 2019-06-05 Christian Frydendahl

We study the temperature dependence of the superconductor-insulator transition in granular superconductors. Empirically, these systems are characterized by very broad resistance tails, which depend exponentially on the temperature, and the…

超导电性 · 物理学 2009-11-13 Yakov M. Strelniker , A. Frydman , S. Havlin

The electrical resistivity of a pure sample of a thin metallic film is found to depend on the boundary conditions. This conclusion is supported by a free-electron model calculation and confirmed by an ab initio relativistic…

介观与纳米尺度物理 · 物理学 2007-05-23 Horacio E. Camblong , Peter M. Levy

When the electron density of highly crystalline thin films is tuned by chemical doping or ionic liq- uid gating, interesting effects appear including unconventional superconductivity, sizeable spin-orbit coupling, competition with…

介观与纳米尺度物理 · 物理学 2018-12-19 G. Dezi , N. Scopigno , S. Caprara , M. Grilli
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