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Monolayer graphene embedded with transition metal nitride (i.e., $X$N$_4$) has been experimentally synthesized recently, where a transition metal atom together with four nitrogen atoms as a unit are embedded in graphene to form a stable…

材料科学 · 物理学 2022-02-02 Haonan Wang , Qian Niu , Zhenhua Qiao

Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One possible approach is to place a studied system in proximity…

Superconductivity in single-layer graphene has attracted considerable interest. Here, using the determinant quantum Monte Carlo method, we study transitions of superconductivity and magnetism in a monolayer graphene with a special periodic…

强关联电子 · 物理学 2024-12-31 Jingyao Meng , Runyu Ma , Tianxing Ma , Hai-Qing Lin

The structure of a graphene monolayer on Ir(111) has been investigated {\it in situ} in the growth chamber by surface x-ray diffraction including the specular rod, which allows disentangling the effect of the sample roughness from that of…

材料科学 · 物理学 2015-06-25 Fabien Jean , Tao Zhou , Nils Blanc , Roberto Felici , Johann Coraux , Gilles Renaud

We study the optomechanical coupling of a single-layer graphene with a high-Q Fabry-Perot microcavity in the membrane-in-the-middle configuration. In ordinary dissipative coupling systems, mechanical oscillators modulate the loss associated…

量子物理 · 物理学 2014-11-12 Lin-Da Xiao , Yu-Feng Shen , Yong-Chun Liu , Meng-Yuan Yan , Yun-Feng Xiao

Resonant scattering at the atomic absorbates in graphene was investigated recently in relation with the transport and gap opening problems. Attaching an impurity atom to graphene is believed to lead to the creation of unusual zero energy…

介观与纳米尺度物理 · 物理学 2015-04-23 P. G. Silvestrov

We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 -…

We demonstrate a flip-chip device for performing low-temperature acoustoelectric measurements on exfoliated two-dimensional materials. With this device, we study gate-tunable acoustoelectric transport in an exfoliated monolayer graphene…

介观与纳米尺度物理 · 物理学 2018-11-22 J. R. Lane , L. Zhang , M. A. Khasawneh , B. N. Zhou , E. A. Henriksen , J. Pollanen

Metal intercalation in epitaxial graphene enables the emergence of proximity-induced superconductivity and modified quantum transport properties. However, systematic transport studies of intercalated graphene have been hindered by…

The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing…

Electron-electron interactions in high-mobility conductors can give rise to transport signatures resembling those described by classical hydrodynamics. Using a nanoscale scanning magnetometer, we imaged a distinctive hydrodynamic transport…

介观与纳米尺度物理 · 物理学 2024-08-02 Marius L. Palm , Chaoxin Ding , William S. Huxter , Takashi Taniguchi , Kenji Watanabe , Christian L. Degen

Graphene has been predicted to develop a magnetic moment by proximity effect when placed on a ferromagnetic film, a promise that could open exciting possibilities in the fields of spintronics and magnetic data recording. In this work, we…

介观与纳米尺度物理 · 物理学 2016-08-01 Luca Pietrobon , Lorenzo Fallarino , Andreas Berger , Andrey Chuvilin , Fèlix Casanova , Luis E. Hueso

Scattering dynamics influence the graphenes transport properties and inhibits the charge carrier deterministic behaviour. The intra or inter-band scattering mechanisms are vital for graphenes optical conductivity response under specific…

介观与纳米尺度物理 · 物理学 2024-04-02 Palash Saha , Bala Murali Krishna Mariserla

Localized magnetic moments have been predicted to develop in graphene samples with vacancies or adsorbates. The interplay between such magnetic impurities and graphene's Dirac quasiparticles leads to remarkable many-body phenomena, which…

介观与纳米尺度物理 · 物理学 2018-02-20 David A. Ruiz-Tijerina , Luis G. G. V. Dias da Silva

Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of…

材料科学 · 物理学 2015-06-11 Gopinadhan Kalon , Young Jun Shin , Hyunsoo Yang

We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the…

介观与纳米尺度物理 · 物理学 2015-06-04 Mario Amado , Enrique Diez , Francesco Rossella , Vittorio Bellani , David Lopez-Romero , Duncan K Maude

We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…

介观与纳米尺度物理 · 物理学 2010-12-14 Dmitri K. Efetov , Philip Kim

Rhombohedral stacked multilayer graphene is an ideal platform to search for correlated electron phenomena, due to its pair of flat bands touching at zero energy and further tunability by an electric field. Furthermore, its valley-dependent…

介观与纳米尺度物理 · 物理学 2024-02-29 Tonghang Han , Zhengguang Lu , Giovanni Scuri , Jiho Sung , Jue Wang , Tianyi Han , Kenji Watanabe , Takashi Taniguchi , Hongkun Park , Long Ju

The conductivity and Hall effect were measured in CVD-grown monolayer graphene as a function of the gate voltage, $V_{g}$, at temperatures down to $T$ = 2 K and in magnetic fields up to $B$ = 8 T. The minimal conductivity was observed at…

材料科学 · 物理学 2018-01-12 Erez Zion , Alexander Butenko , Amos Sharnoi , Moshe Kaveh , Issai Shlimak

Band gap engineering in graphene may open the routes towards transistor devices in which electric current can be switched off and on at will. One may, however, ask if a semiconducting band gap alone is sufficient to quench the current in…

介观与纳米尺度物理 · 物理学 2012-11-12 G. Tkachov , Martina Hentschel