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We report a metal-insulator transition in disordered graphene with low coverages of hydrogen atoms. Hydrogen interacting with graphene creates short-range disorder and localizes states near the neutrality point. The energy range of…

介观与纳米尺度物理 · 物理学 2015-03-13 Junhyeok Bang , K. J. Chang

We have developed a technique to tune the carrier density in graphene using a lithium-ion-based solid electrolyte. We demonstrate that the solid electrolyte can be used as both a substrate to support graphene and a back gate.It can induce a…

材料科学 · 物理学 2016-10-25 Jialin Zhao , Meng Wang , Hui Li , Xuefu Zhang , Lixing You , Shan Qiao , Bo Gao , Xiaoming Xie , Mianheng Jiang

We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means…

介观与纳米尺度物理 · 物理学 2010-07-30 T. O. Wehling , S. Yuan , A. I. Lichtenstein , A. K. Geim , M. I. Katsnelson

Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…

材料科学 · 物理学 2019-06-14 B. C. Worley , S. Kim , T. J. Ha , S. Park , R. Haws , P. Rossky , D. Akinwande , A. Dodabalapur

We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250 mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a…

材料科学 · 物理学 2015-05-14 Yung-Fu Chen , Myung-Ho Bae , Cesar Chialvo , Travis Dirks , Alexey Bezryadin , Nadya Mason

We report on a strongly coupled bilayer graphene (BLG) - \bise\ device with a junction resistance of less than 1.5 k$\Omega\mu$m$^2$. This device exhibits unique behavior at the interface, which cannot be attributed to either material in…

介观与纳米尺度物理 · 物理学 2018-03-23 Ayelet Zalic , Tom Dvir , Hadar Steinberg

The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the…

Position measurements at the quantum level are vital for many applications, but also challenging. Typically, methods based on optical phase shifts are used, but these methods are often weak and difficult to apply to many materials. An…

We predict a transition to metallicity when a sufficient amount of disorder is induced in graphene. Calculations were performed by means of a first principles stochastic quench method. The resulting amorphous graphene can be seen as…

材料科学 · 物理学 2015-05-28 E. Holmstrom , J. Fransson , O. Eriksson , R. Lizarraga , B. Sanyal , M. I. Katsnelson

Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the…

介观与纳米尺度物理 · 物理学 2019-03-20 Rebeca Ribeiro-Palau , Shaowen Chen , Yihang Zeng , Kenji Watanabe , Takashi Taniguchi , James Hone , Cory R. Dean

We study electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder. We show that the transport properties of the system depend strongly on the character of disorder. Away from half filling, the…

介观与纳米尺度物理 · 物理学 2007-05-23 P. M. Ostrovsky , I. V. Gornyi , A. D. Mirlin

We have measured the impact of atomic hydrogen adsorption on the electronic transport properties of graphene sheets as a function of hydrogen coverage and initial, pre-hydrogenation field-effect mobility. Our results are compatible with…

介观与纳米尺度物理 · 物理学 2015-05-19 Jyoti Katoch , J. H. Chen , Ryuichi Tsuchikawa , Christian W. Smith , Eduardo R. Mucciolo , Masa Ishigami

We consider the nonlinear terahertz response of n-doped monolayer graphene at room temperature using a microscopic theory of carrier dynamics. Our tight-binding model treats the carrier-field interaction in the length gauge, includes phonon…

介观与纳米尺度物理 · 物理学 2019-03-27 L. G. Helt , M. M. Dignam

The electronic properties of twisted bilayer graphene on SiC substrate were studied via combination of transport measurements and scanning tunneling microscopy. We report the observation of enhanced intervalley scattering from one Dirac…

介观与纳米尺度物理 · 物理学 2012-09-17 Lan Meng , Zhao-Dong Chu , Yanfeng Zhang , Ji-Yong Yang , Rui-Fen Dou , Jia-Cai Nie , Lin He

Interactions among charge carriers in graphene can lead to the spontaneous breaking of multiple degeneracies. When increasing the number of graphene layers following rhombohedral stacking, the dominant role of Coulomb interactions becomes…

We investigate the conductance of normal-conductor/graphene/normal-conductor (NGN) junctions for arbitrary on-site potentials in the normal and graphitic parts of the system. We find that a ballistic NGN junction can display insulating…

介观与纳米尺度物理 · 物理学 2007-10-11 John P Robinson , Henning Schomerus

The weak temperature dependence of the resistance R(T) of monolayer graphene1-3 indicates an extraordinarily high intrinsic mobility of the charge carriers. Important complications are the presence of mobile scattering centres that strongly…

材料科学 · 物理学 2010-01-18 Viera Skakalova , Alan B. Kaiser , Jai Seung Yoo , Dirk Obergfell , Siegmar Roth

Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few meV. This behaviour has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly,…

介观与纳米尺度物理 · 物理学 2014-04-29 P. San-Jose , R. V. Gorbachev , A. K. Geim , K. S. Novoselov , F. Guinea

Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites either based on covalent or non- covalent coupling of…

介观与纳米尺度物理 · 物理学 2015-03-19 Adrien Allain , Zheng Han , Vincent Bouchiat

The electron scattering by the short-range defects in the monolayer graphene is considered in the framework of the flatland model. We analyze the effect of this scattering on the electronic resistivity of the monolayer graphene (direct…

介观与纳米尺度物理 · 物理学 2018-10-10 N Firsova , S Ktitorov