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相关论文: Electron Correlation driven Metal-Insulator transi…

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One of the early triumphs of quantum physics is the explanation why some materials are metallic whereas others are insulating. While a treatment based on single electron states correctly predicts the character of most materials this…

强关联电子 · 物理学 2015-09-02 S. Friedemann , H. Chang , M. B. Gamża , P. Reiss , X. Chen , P. Alireza , W. A. Coniglio , D. Graf , S. Tozer , F. M. Grosche

Artificially created two-dimensional (2D) interfaces or structures are ideal for seeking exotic phase transitions due to their highly tunable carrier density and interfacially enhanced many-body interactions. Here, we report the discovery…

超导电性 · 物理学 2021-03-16 T. T. Han , L. Chen , C. Cai , Z. G. Wang , Y. D. Wang , Z. M. Xin , Y. Zhang

We have grown VO2 thin films by laser ablation for electronic device applications. In obtaining the thin films of the pure VO2 phase, oxygen partial pressure is a critical parameter because vanadium oxides have several phases with the…

材料科学 · 物理学 2007-05-23 B. G. Chae , D. H. Youn , H. T. Kim , S. Y. Maeng , K. Y. Kang

The metal-insulator transition (MIT) in rare-earth nickelates exemplifies the intricate interplay between electronic correlations and lattice dynamics in quantum materials. This work focuses on SmNiO$_3$ as a prototypical system, employing…

材料科学 · 物理学 2025-03-12 Guoyong Shi , Fenglin Deng , Ri He , Dachuan Chen , Xuejiao Chen , Peiheng Jiang , Zhicheng Zhong

The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques…

The conductance of an open quench-disordered two-dimensional (2D) electron system subject to an in-plane magnetic field is calculated within the framework of conventional Fermi liquid theory applied to actually a three-dimensional system of…

介观与纳米尺度物理 · 物理学 2007-05-23 Yu. V. Tarasov

Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the…

Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility,…

强关联电子 · 物理学 2016-11-18 A. A. Shashkin , S. V. Kravchenko

Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase…

强关联电子 · 物理学 2024-06-12 P. Homm , M. Menghini , J. W. Seo , S. Peters , J. -P. Locquet

Despite decades of experimental and theoretical efforts, the origin of metal-insulator transitions (MIT) in strongly-correlated materials is one of the main longstanding problems in condensed matter physics. An archetypal example is V2O3,…

The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt…

强关联电子 · 物理学 2007-05-23 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

Structural phase transitions serve as the basis for many functional applications including shape memory alloys (SMAs), switches based on metal-insulator transitions (MITs), etc. In such materials, lattice incompatibility between phases…

Surface termination is known to play an important role in determining the physical properties of materials. It is crucial to know how surface termination affects the metal-insulator transition (MIT) of V$_2$O$_3$ films for both fundamental…

强关联电子 · 物理学 2021-06-17 Asish K. Kundu , Sukanta Barman , Krishnakumar S. R. Menon

We address the concomitant metal-insulator transition (MIT) and antiferromagnetic ordering in the novel pyrochlore iridate Eu2Ir2O7 by combining x-ray absorption spectroscopy, x-ray and neutron diffractions and density functional theory…

The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…

Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO2 epitaxial films with different crystallographic orientations, grown on (0001)…

强关联电子 · 物理学 2015-07-15 Takayoshi Katase , Kenji Endo , Hiromichi Ohta

We report the observation of a parallel magnetic field induced metal-insulator transition (MIT) in a high-mobility two-dimensional electron gas (2DEG) for which spin and localization physics most likely play no major role. The high-mobility…

介观与纳米尺度物理 · 物理学 2015-03-19 Xiaoqing Zhou , B. Schmidt , C. Proust , G. Gervais , L. N. Pfeiffer , K. W. West , S. Das Sarma

The metal-insulator transition (MIT) is one of the most dramatic manifestations of electron correlations in materials. Various mechanisms producing MITs have been extensively considered, including the Mott (electron localization via Coulomb…

Tuning the electronic properties of a matter is of fundamental interest in scientific research as well as in applications. Recently, the Mott insulator-metal transition has been reported in a pristine layered transition metal…

强关联电子 · 物理学 2020-05-29 Kunliang Bu , Wenhao Zhang , Ying Fei , Zongxiu Wu , Yuan Zheng , Jingjing Gao , Xuan Luo , Yu-Ping Sun , Yi Yin

High-quality epitaxial SrVO3 (SVO) thin films of various thicknesses were grown on (001)-oriented LSAT substrates by pulsed electron-beam deposition technique. Thick SVO films (~25 nm) exhibited metallic behavior with the electrical…

强关联电子 · 物理学 2013-07-25 Man Gu , Stuart A. Wolf , Jiwei Lu
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