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A family of titanium oxypnictide materials BaTi2Pn2O (Pn = pnictogen) becomes superconducting when a charge and/or spin density wave is suppressed. With hole doping, isovalent doping and pressure, a whole range of tuning parameters is…

超导电性 · 物理学 2021-12-02 Han-Xiang Xu , Daniel Guterding , Harald O. Jeschke

We report that the {\pi}-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological insulator hybrid material. We have grown epitaxial…

The diversities in crystal structures and ways of doping result in extremely diversified phase diagrams for iron-based superconductors. With angle-resolved photoemission spectroscopy (ARPES), we have systematically studied the effects of…

超导电性 · 物理学 2014-09-16 Z. R. Ye , Y. Zhang , F. Chen , M. Xu , J. Jiang , X. H. Niu , C. H. P. Wen , L. Y. Xing , X. C. Wang , C. Q. Jin , B. P. Xie , D. L. Feng

Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene…

The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi…

介观与纳米尺度物理 · 物理学 2013-11-12 T. P. Kaloni , Y. C. Cheng , U. Schwingenschlögl

Gate-tunable spin-dependent properties could be induced in graphene at room temperature through magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate…

介观与纳米尺度物理 · 物理学 2020-11-17 Mihovil Bosnar , Ivor Lončarić , P. Lazić , K. D. Belashchenko , Igor Žutić

Heavily doping graphene by intercalation can raise its Fermi level near an extended van Hove singularity, potentially inducing correlated electronic phases. Intercalation also modifies the band structure: dopants may hybridize with carbon…

This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths…

We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show…

介观与纳米尺度物理 · 物理学 2011-03-07 I. Deretzis , A. La Magna

Controlling the charge carrier density provides an efficient way to trigger phase transitions and modulate the optoelectronic properties in natural materials. This approach could be used to induce topological transitions in the optical…

In the attempt to induce spin-polarized states in graphene, rare-earth deposition on Gr/Co(0001) has been demonstrated to be a successful strategy: the coupling of graphene with the cobalt substrate provides spin-polarized conical-shaped…

材料科学 · 物理学 2024-09-06 Cesare Tresca , Gianni Profeta , Federico Bisti

We have measured the electrical response to NO$_2$, N$_2$, NH$_3$ and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity…

材料科学 · 物理学 2015-06-16 I. Iezhokin , P. Offermans , S. H. Brongersma , A. J. M. Giesbers , C. F. J. Flipse

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…

The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of…

介观与纳米尺度物理 · 物理学 2015-05-13 Y. Qi , S. H. Rhim , G. F. Sun , M. Weinert , L. Li

Bismuth selenide (Bi2Se3) is a good topological insulator (TI) with its surface band Dirac point inside the bulk bandgap. However, Bi2Se3 films grown by molecular beam epitaxy (MBE) often require tuning of Fermi level near the Dirac point…

介观与纳米尺度物理 · 物理学 2025-09-11 Shu-Wei Wang , Hang Chi , Jui-Che Chung

Graphene, the two-dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by…

材料科学 · 物理学 2015-05-13 L. Magaud , F. Hiebel , F. Varchon , P. Mallet , J. -Y. Veuillen

Graphene outstanding properties directly come from its pecular electronic structure and thus from the honeycomb lattice symmetry. The way interaction with the substrate impact this lattice is of primary importance. This is peculiarly true…

材料科学 · 物理学 2007-12-21 F. Varchon , P. Mallet , J. -Y. Veuillen , L. Magaud

We investigate the electronic structure of terraces of single layer graphene (SLG) by scanning tunneling microscopy (STM) on samples grown by thermal decomposition of 6H-SiC(0001) crystals in ultra-high vacuum. We focus on the perturbations…

介观与纳米尺度物理 · 物理学 2012-01-18 A. Mahmood , P. Mallet , J. -Y. Veuillen

Persistent currents driven by a static magnetic flux parallel to the carbon nanotube axis are investigated. Owing to the hexagonal symmetry of graphene the Fermi contour expected for a 2D-lattice reduces to two points. However the electron…

介观与纳米尺度物理 · 物理学 2009-11-07 M. Szopa , M. Marganska , E. Zipper

Tuning the macroscopic dielectric response on demand holds potential for actively tunable metaphotonics and optical devices. In recent years, graphene has been extensively investigated as a tunable element in nanophotonics. Significant…

应用物理 · 物理学 2019-10-23 Jeremy Brouillet , Georgia T. Papadakis , Harry A. Atwater