相关论文: Staircase-like transfer characteristics in multila…
We study electron transport in monolayer molybdenum disulfide MoS$_2$ subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic…
Low-dimensional (LD) transition metal dichalcogenides (TMDs) in the form of nanoflakes, which consist of one or several layers, are the subject of intensive fundamental and applied research. Due to the size-induced transition from a bulk to…
Magnetic MXenes are turning out to be an important family of materials for exploring 2D magnetism. However, investigations into the inter-dependence of layer thickness, stacking patterns and magnetism in these materials, from a microscopic…
Transparent amorphous oxide semiconductors (TAOSs) based transparent thin-film transistors (TTFTs) with high field effect mobility are essential for developing advanced flat panel displays. Among TAOSs, amorphous (a-) SnO$_2$ has several…
We address the ballistic transmission of charge carriers across ordered line defects in monolayer transition metal dichalcogenides. Our study reveals the presence of a transport gap driven by spin-orbit interactions, spin and valley…
Dynamic control of conductivity and optical properties via atomic structure changes is of tremendous technological importance in information storage. Energy consumption considerations provide a driving force toward employing thin materials…
We review vibrational and electronic properties of single and a few layer MoS$_2$ relevant to understand their resonant and non-resonant Raman scattering results. In particular, the optical modes and low frequency shear and layer breathing…
In semiconducting monolayer transition metal dichalcogenides (ML-TMDs), broken inversion symmetry and strong spin-orbit coupling result in spin-valley lock-in effects so that the valley degeneracy may be lifted by external magnetic fields,…
We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) gate structure. We find…
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…
The interest in MoS2 for radio-frequency (RF) application has recently increased. However, little is known on the scaling behavior of transistors made from MoS2 for RF applications, which is important for establishing performance limits for…
Dislocations in van der Waals materials are linear defects confined to the interfaces between consecutive stoichiometric monolayers of a bulk layered crystal. Here, we present a mesoscale model for the description of interlayer dislocations…
The sensitive dependence of electronic and thermoelectric properties of MoS$_2$ on the applied strain opens up a variety of applications in the emerging area of straintronics. Using first principles based density functional theory…
Double diffusive staircases are investigated experimentally in a fluid layer with a stabilizing temperature gradient and a destabilizing gradient of ion concentration. Gradients of temperature and ion concentration are maintained in a…
We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…
We study the impact of top SiO2 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistor (FeFET) with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. We find that the MW increases with the…
Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence…
The spectacular metal-to-insulator transition of V2O3 can be progressively suppressed in thin film samples. Evidence for phase separation was observed using microbridges as a mesoscopic probe of transport properties where the same film…
The cross-plane (across-layers) phonon thermal transport of five diverse, layered semiconductors is investigated by accounting for higher-order four-phonon scattering, phonon renormalization, and multi-channel thermal transport. For…
The transient high-frequency noise response of two-dimensional MoS2 under abrupt large signal switching field conditions is studied by means of an ensemble Monte Carlo simulator. Low-to-high and high-to-low transitions are analyzed at low…