中文
相关论文

相关论文: Localized Excitons in Defective Monolayer Germaniu…

200 篇论文

Semiconductor heterostructures are backbones for solid state based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures has enabled the band engineering of semiconductor heterojunctions for…

Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all…

The interactions between different layers in van der Waals heterostructures have a significant impact on the electronic and optical characteristics. By utilizing the intrinsic dipole moment of Janus transition metal dichalcogenides (TMDs),…

材料科学 · 物理学 2024-01-18 Ö. C. Yelgel

Many monolayer transition metal dichalcogenides, including MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, are direct bandgap two-dimensional (2D) semiconductors with sharp optical resonances at excitonic bound state frequencies. Recent experiments…

介观与纳米尺度物理 · 物理学 2025-10-27 Tobias M. R. Wolf , Tian Xie , Chenhao Jin , Allan H. MacDonald

Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D…

This study presents a detailed simulation-based analysis of the detection limits of multi-element monolithic Germanium (Ge) detectors to cadmium traces in environmental soil samples. Using the capabilities of the Geant4 Monte Carlo toolkit…

Existence of van der Waals gaps renders two-dimensional (2D) materials ideal passages of lithium for being used as anode materials. However, the requirement of good conductivity significantly limits the choice of 2D candidates. So far only…

材料科学 · 物理学 2022-06-13 Zheng Shu , Xiangyue Cui , Bowen Wang , Hejin Yan , Yongqing Cai

Si-Ge monolayers (SiGeM) with different elementary proportion x (0<x<1) were systematically studied for the first-time using ab initio calculations in this work. The structural stabilities of the Si1-xGexM with different symmetries were…

材料科学 · 物理学 2020-04-07 Jiating Lu , Xi Zhang , Limeng Shen , Ya Nie , Gang Xiang

Point defects in the binary group-IV monochalcogenide monolayers of SnS, SnSe, GeS, GeSe are investigated using density-functional-theory calculations. Several stable configurations are found for oxygen defects, however we give evidence…

介观与纳米尺度物理 · 物理学 2016-08-17 Lídia C. Gomes , A. Carvalho , A. H. Castro Neto

Atomic monolayers represent a novel class of materials to study localized and free excitons in two dimensions and to engineer optoelectronic devices based on their significant optical response. Here, we investigate the role of the substrate…

介观与纳米尺度物理 · 物理学 2017-07-21 Oliver Iff , Yu-Ming He , Nils Lundt , Sebastian Stoll , Vasilij Baumann , Sven Höfling , Christian Schneider

Spin defects in atomically thin two-dimensional (2D) materials such as hexagonal boron nitride (hBN) attract significant attention for their potential quantum applications. The layered host materials not only facilitate seamless integration…

Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the…

材料科学 · 物理学 2020-07-01 Anne Marie Z. Tan , Christoph Freysoldt , Richard G. Hennig

Understanding the mechanism of single photon emission (SPE) in two-dimensional (2D) material is an unsolved problem important for quantum optical materials and the development of quantum information applications. In 2D transition metal…

In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moir\'e superlattice. While it is widely recognized that a moir\'e superlattice can…

Monolayers of transition-metal dichalcogenides such as WSe2 have become increasingly attractive due to their potential in electrical and optical applications. Because the properties of these 2D systems are known to be affected by their…

Magnetisms in $p$-type monolayer GaX (X=S,Se) is investigated by performing density-functional calculations. Due to the large density of states near the valence band edge, these monolayer semiconductors are ferromagnetic within a small…

介观与纳米尺度物理 · 物理学 2014-09-18 Sianxin Wu , Xia Dai , Hongyi Yu , Heng Fan , Jiangping Hu , Wang Yao

In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this…

介观与纳米尺度物理 · 物理学 2020-08-20 M. Goryca , J. Li , A. V. Stier , T. Taniguchi , K. Watanabe , E. Courtade , S. Shree , C. Robert , B. Urbaszek , X. Marie , S. A. Crooker

Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving…

We present a detailed first principles density functional theory study of intrinsic and extrinsic point defects in monolayer (ML) WSe2. Among the intrinsic point defects, Se vacancies (Sevac) have the lowest formation energy (disregarding…

材料科学 · 物理学 2019-01-17 Yu Jie Zheng , Su Ying Quek

Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding…