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相关论文: Resistive Switching Behaviour of Organic Molecules

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Resistive switching (RS) devices, based on soft materials such as organic, biomolecules as well as natural plant extracts etc., has emerged as a promising alternative to the conventional memory technologies. They offer simple device…

材料科学 · 物理学 2025-12-12 Rahul Deb , Debajyoti Bhattacharjee , Syed Arshad Hussain

Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…

The paper presents a short overview of research into properties of organic materials and structures that could be used in optoelectrical switches, i.e., switches in which changes in electrical properties are triggered by light of…

化学物理 · 物理学 2011-12-06 Juliusz Sworakowski , Petro Lutsyk

Bipolar resistive switching using organic molecule is very promising for memory application owing to their advantages like simple device structure, low manufacturing cost, their stability and flexibility etc. Herein we report…

The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…

材料科学 · 物理学 2023-06-21 Farhana Yasmin Rahman , Debajyoti Bhattacharjee , Syed Arshad Hussain

The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…

Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy…

材料科学 · 物理学 2022-05-12 Anurag Pritam , Ritu Gupta , Prakash Chandra Mondal

Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…

介观与纳米尺度物理 · 物理学 2012-06-14 Marcus Wu Shihong , Themistoklis Prodromakis , Iulia Salaoru , Christofer Toumazou

Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance…

介观与纳米尺度物理 · 物理学 2023-10-03 V. A. Slipko , Y. V. Pershin

Neuromorphic computing and engineering has been the focus of intense research efforts that have been intensified recently by the mutation of Information and Communication Technologies (ICT). In fact, new computing solutions and new hardware…

应用物理 · 物理学 2018-10-09 Sebastien Pecqueur , Dominique Vuillaume , Fabien Alibart

Resistive switching devices emerged a huge amount of interest as promising candidates for non-volatile memories as well as artificial synapses due to their memristive behavior. The main physical and chemical phenomena which define their…

材料科学 · 物理学 2018-08-01 Tobias Gergs , Sven Dirkmann , Thomas Mussenbrock

Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…

材料科学 · 物理学 2023-04-04 Lijun Zhu

Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…

介观与纳米尺度物理 · 物理学 2016-10-27 Robert Göckeritz , Nico Homonnay , Alexander Müller , Bodo Fuhrmann , Georg Schmidt

Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current…

材料科学 · 物理学 2011-02-17 Jun Yao , Lin Zhong , Douglas Natelson , James M. Tour

Electrical switching has been observed in carefully designed metal-insulator-metal devices built at small geometries. These devices are also commonly known as memristors and consist of specific materials such as transition metal oxides,…

材料科学 · 物理学 2013-06-10 Gaurav Gandhi , Varun Aggarwal

Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies…

介观与纳米尺度物理 · 物理学 2015-05-20 S. E. Savel'ev , A. S. Alexandrov , A. M. Bratkovsky , R. Stanley Williams

Volatile threshold resistive switching and neuronal oscillations in phase-change materials, specifically those undergoing metal-to-insulator transitions, offer unique attributes such as fast and low-field volatile switching, tunability, and…

材料科学 · 物理学 2025-07-08 Huandong Chen , Jayakanth Ravichandran

Several abilities of biological systems, such as adaptation to natural environment, or of animals to learn patterns when appropriately trained, are features that are extremely useful, if emulated by electronic circuits, in applications…

神经元与认知 · 定量生物学 2011-12-22 M. Di Ventra , Y. V. Pershin

Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials,…

Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…

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