相关论文: Measurements of Single Event Upset in ATLAS IBL

A single event upset (SEU) is a critical soft error that occurs in semiconductor devices on exposure to ionising particles from space environments. SEUs cause bit flips in the memory component of semiconductors. This creates a multitude of…

Single Event Effects (SEEs) - predominately bit-flips in electronics caused by particle interactions - are a major concern for ASICs operated in high radiation environments such as ABCStar ASICs, which are designed to be used in the future…

Designing integrated circuits in radiation environments such as the High Luminosity LHC (HL-LHC) is challenging. Integrated circuits will be exposed to radiation-induced Single Event Effects (SEE). In deep sub-micron technology devices, the…

We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of…

We present the single event effect (SEE) tolerance of a mixed-signal application-specific integrated circuit (ASIC) developed for a charge-coupled device camera onboard a future X-ray astronomical mission. We adopted proton and heavy ion…

High energy particles from cosmic rays or packaging materials can generate a glitch or a current transient (single event transient or SET) in a logic circuit. This SET can eventually get captured in a register resulting in a flip of the…

Heavy ions induced single event upset (SEU) sensitivity of three-dimensional integrated SRAMs are evaluated by using Monte Carlo sumulation methods based on Geant4. The cross sections of SEUs and Multi Cell Upsets (MCUs) for 3D SRAM are…

Deep Neural Network has proved its potential in various perception tasks and hence become an appealing option for interpretation and data processing in security sensitive systems. However, security-sensitive systems demand not only high…

We present experimental results of the cross-section related to cosmic-ray irradiation at ground level for minimum-sized six-transistors (6T) and eight-transistors (8T) bit-cells SRAM memories implemented on a 65 nm CMOS standard…

Interference effects strongly affect the transport characteristics of a benzene single-electron transistor (SET) and for this reason we call it interference SET (I-SET). We focus on the effects of degeneracies between many-body states of…

Single electron transistors (SETs) are very sensitive electrometers and they can be used in a range of applications. In this paper we give an introduction to the SET and present a full quantum mechanical calculation of how noise is…

We report on low-temperature noise measurements of a single electron transistor (SET) immersed in superfluid $^4$He. The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to…

The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…

The advanced complex electronic systems increasingly demand safer and more secure hardware parts. Correspondingly, fault injection became a major verification milestone for both safety- and security-critical applications. However, fault…

Very deep submicron and nanometer technologies have increased notably integrated circuit (IC) sensitiveness to radiation. Soft errors are currently appearing into ICs working at earth surface. Hardened circuits are currently required in…

We build a 1064 nm fiber laser system-based testing facility for emulating SETs in different electronics components and ICs. Using these facilities, we tested the 4N35 optocoupler to observe SETs for the first time.

Radio-frequency (rf)- operated single-electron transistors (SETs) are high-sensitivity, fast-response electrometers, which are valuable for developing new insights into single-charge dynamics. We investigate high-frequency (up to 1 MHz)…

We report an experimental observation of the backaction of a Single Electron Transistor (SET) measuring the Coulomb staircase of a single electron box. As current flows through the SET, the charge state of the SET island fluctuates. These…

This report presents the dataset and baseline of Task 3 of the DCASE2021 Challenge on Sound Event Localization and Detection (SELD). The dataset is based on emulation of real recordings of static or moving sound events under real conditions…

We propose a new task for sound event detection (SED): sound event triage (SET). The goal of SET is to detect an arbitrary number of high-priority event classes while allowing misdetections of low-priority event classes where the priority…