中文
相关论文

相关论文: Harnessing Exciton-Exciton Annihilation in Two-Dim…

200 篇论文

Two-dimensional (2D) semiconductors possess strongly bound excitons, opening novel opportunities for engineering light-matter interaction at the nanoscale. However, their in-plane confinement leads to large non-radiative exciton-exciton…

介观与纳米尺度物理 · 物理学 2023-04-13 Luca Sortino , Merve Gülmüs , Benjamin Tilmann , Leonardo de S. Menezes , Stefan A. Maier

Auger-like exciton-exciton annihilation (EEA) is considered the key fundamental limitation to quantum yield in devices based on excitons in two-dimensional (2d) materials. Since it is challenging to experimentally disentangle EEA from…

介观与纳米尺度物理 · 物理学 2021-10-12 Alexander Steinhoff , Matthias Florian , Frank Jahnke

Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride (hBN) by cathodoluminescence at low temperature. Thanks to a careful tune of the the…

介观与纳米尺度物理 · 物理学 2019-07-24 Alexandre Plaud , Léonard Schué , Kenji Watanabe , Takashi Taniguchi , Annick Loiseau , Julien Barjon

Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a…

材料科学 · 物理学 2021-08-25 Hyungjin Kim , Shiekh Zia Uddin , Naoki Higashitarumizu , Eran Rabani , Ali Javey

Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal…

Controlling exciton recombination in atomically thin semiconductors is central to their optoelectronic functionality, as the competition between radiative and non-radiative decay channels governs emission efficiency. Existing approaches,…

The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through…

Monolayer transition metal dichalcogenides (1L-TMDs) have tremendous potential as atomically thin, direct bandgap semiconductors that can be used as convenient building blocks for quantum photonic devices. However, the short exciton…

Exciton-exciton annihilation (EEA), in which two excitons interact to generate high-energy excitations, is an important non-radiative channel in light-induced excited-state relaxation. When efficient, this process offers an alternative…

材料科学 · 物理学 2025-06-06 Guy Vosco , Sivan Refaely-Abramson

Van der Waals materials and heterostructures manifesting strongly bound room temperature exciton states exhibit emergent physical phenomena and are of a great promise for optoelectronic applications. Here, we demonstrate that nanostructured…

Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative and non-radiative…

We quantitatively illustrate the fundamental limit that exciton-exciton annihilation (EEA) may impose to the light emission of monolayer transition metal dichalcogenide (TMDC) materials. The EEA in TMDC monolayers shows dependence on the…

光学 · 物理学 2016-06-01 Yiling Yu , Yifei Yu , Chao Xu , Andy Barrette , Kenan Gundogdu , Linyou Cao

Excitons in monolayer transition-metal-dichalcogenides (TMDs) dominate their optical response and exhibit strong light-matter interactions with lifetime-limited emission. While various approaches have been applied to enhance light-exciton…

Van der Waals heterostructures made from atomically thin transition metal dichalcogenides (TMD) and graphene have emerged as a building block for optoelectronic devices. Such systems are also uniquely poised to investigate interfacial…

Rapid exciton-exciton annihilation (EEA) in two-dimensional semiconductors limits access to high-density excitonic regimes essential for efficient optoelectronic operation under strong excitation. Here, we show that EEA is suppressed by…

介观与纳米尺度物理 · 物理学 2026-03-19 Tae Gwan Park , Xufan Li , Kyungnam Kang , David B. Geohegan , Christopher M. Rouleau , Alexander A. Puretzky , Kai Xiao

Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-plane excitonic dipoles are expected to efficiently couple…

Exciton binding energies of hundreds of meV and strong light absorption in the optical frequency range make transition metal dichalcogenides (TMDs) promising for novel optoelectronic nanodevices. In particular, atomically thin TMDs can be…

介观与纳米尺度物理 · 物理学 2018-04-24 Simon Ovesen , Samuel Brem , Christopher Linderälv , Mikael Kuisma , Paul Erhart , Malte Selig , Ermin Malic

Two-dimensional (2D) materials have attracted a great deal of interest in recent years. This family of materials allows for the realization of versatile electronic devices and holds promise for next-generation (opto)electronics. Their…

Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on…

Excitons in monolayer transition metal dichalcogenides (TMDs) dominate their optical response due to exceptionally large binding energies arising from their two-dimensional nature. Several theoretical models have been proposed to describe…

介观与纳米尺度物理 · 物理学 2025-07-09 Anabel Atash Kahlon , Matan Meshulam , Tomer Eini , Thomas Poirier , James H. Edgar , Seth Ariel Tongay , Itai Epstein
‹ 上一页 1 2 3 10 下一页 ›