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相关论文: Spin-Dependent Charge-Carrier Recombination Proces…

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Spin-dependent processes play a crucial role in organic electronic devices. Spin coherence can give rise to spin mixing due to a number of processes such as hyperfine coupling, and leads to a range of magnetic field effects. However, it is…

介观与纳米尺度物理 · 物理学 2016-09-07 Marzieh Kavand , Douglas Baird , Kipp van Schooten , Hans Malissa , John M. Lupton , Christoph Boehme

We present experiments to systematically study the time constants of spin-dependent recombination processes in semiconductors using pulsed electrically detected magnetic resonance (EDMR). The combination of time-programmed optical…

We have studied the role of spin-dependent processes on conductivity in polyfluorene (PFO) thin films by conducting continuous wave (c.w.) electrically detected magnetic resonance (EDMR) spectroscopy at temperatures between 10 K and 293 K…

材料科学 · 物理学 2016-12-14 Richards Miller , K. J. van Schooten , H. Malissa , G. Joshi , S. Jamali , J. M. Lupton , C. Boehme

The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the…

We report measurement of the ensemble averaged transverse spin relaxation time (T2*) in bulk and few molecules of the organic semiconductor tris(8-hydroxyquinolinolato aluminum) or Alq3. This system exhibits two characteristic T2* times,…

介观与纳米尺度物理 · 物理学 2008-07-15 B. Kanchibotla , S. Pramanik , S. Bandyopadhyay , M. Cahay

Spin-dependent relaxation and recombination processes in $\gamma$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the…

材料科学 · 物理学 2014-07-22 David P. Franke , Felix Hoehne , Leonid S. Vlasenko , Kohei M. Itoh , Martin S. Brandt

We report ultrafast surface pump and interface probe experiments on photoexcited carrier transport across single crystal bismuth films on sapphire. The film thickness is sufficient to separate carrier dynamics from lattice heating and…

材料科学 · 物理学 2013-03-21 Y. M. Sheu , Y. J. Chien , C. Uher , S. Fahy , D. A. Reis

The recombination of electron-hole pairs injected in extended conjugated systems is modeled as a multi-pathway vibron-driven relaxation in monoexcited state-space. The computed triplet-to-singlet ratio of exciton formation times $r =…

材料科学 · 物理学 2009-11-07 Stoyan Karabunarliev , Eric. R. Bittner

Electrically Detected Magnetic Resonance (EDMR) was used to study a series of multilayer organic devices based on aluminum (III) 8-hydroxyquinoline. These devices were designed to identify the micoscopic origin of different spin dependent…

材料科学 · 物理学 2015-06-24 G. B. Silva , C. F. O. Graeff , F. Nuesch , L. Zuppiroli

The effect of exchange interactions within spin pairs on spin-dependent transport and recombination rates through localized states in semiconductors during coherent electron spin resonant excitation is studied theoretically. It is shown…

材料科学 · 物理学 2008-01-09 A. Gliesche , C. Michel , V. Rajevac , K. Lips , S. D. Baranovskii , F. Gebhard , C. Boehme

Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and…

Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly…

材料科学 · 物理学 2017-04-05 F. Cadiz , D. Lagarde , P. Renucci , D. Paget , T. Amand , H. Carrère , A. C. H. Rowe , S. Arscott

Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (~ 1e9 cm-3 to ~ 7e10 cm-3).…

材料科学 · 物理学 2012-01-11 V. Lang , J. D. Murphy , R. J. Falster , J. J. L. Morton

Here we describe a new high frequency/high field continuous wave and pulsed electrically detected magnetic resonance (CW EDMR and pEDMR) setup, operating at 263 GHz and resonance fields between 0 and 12 T. Spin dependent transport in…

材料科学 · 物理学 2015-12-09 W. Akhtar , A. Schnegg , S. Veber , C. Meier , M. Fehr , K. Lips

We report a magnetotransport study of spin relaxation in 1.4-21.2 nm epitaxial SrIrO$_3$ thin films coherently strained on SrTiO$_3$ substrates. Fully charge compensated semimetallic transport has been observed in SrIrO$_3$ films thicker…

强关联电子 · 物理学 2020-06-16 L. Zhang , X. Jiang , X. Xu , X. Hong

The magnetic field effects on the carrier mobilities and recombination in tri-(8-hydroxyquinoline)-aluminum (Alq3) based light-emitting diodes have been measured by the method of transient electroluminescence. It is confirmed that the…

材料科学 · 物理学 2015-05-18 Feng Li , Linyuan Xin , Shiyong Liu , Bin Hu

In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a…

介观与纳米尺度物理 · 物理学 2024-07-11 D. Lagarde , M. Glazov , V. Jindal , K. Mourzidis , Iann Gerber , A. Balocchi , L. Lombez , P. Renucci , T. Taniguchi , K. Watanabe , C. Robert , X. Marie

We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asymmetric InAs/AlGaInAs/InP quantum dots (dashes) emitting at telecom wavelengths. The structures are highly elongated and of large volume,…

介观与纳米尺度物理 · 物理学 2018-07-31 Ł. Dusanowski , M. Gawełczyk , J. Misiewicz , S. Höfling , J. P. Reithmaier , G. Sęk

At low temperatures and high magnetic fields, electron and hole spins in an organic light-emitting diode (OLED) become polarized so that recombination preferentially forms molecular triplet excited-state species. For low device currents,…

介观与纳米尺度物理 · 物理学 2021-04-28 Tobias Scharff , Wolfram Ratzke , Jonas Zipfel , Philippe Klemm , Sebastian Bange , John M. Lupton

The unique properties of organic semiconductors make them versatile base materials for many applications ranging from light emitting diodes to transistors. The low spin-orbit coupling typical for carbon-based materials and the resulting…

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