相关论文: Giant Magnetoresistance in Boundary-Driven Spin Ch…

Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered…

We reveal the giant magnetoresistance induced by the spin-polarized current in the ferromagnet (F_1)/topological insulator (TI)/ferromagnet (F_2) junction, where two ferromagnets are deposited on the diffusive surface of the TI. We can…

It is shown that, upon the electron quantum transport via the nanostructure containing a spin dimer, the spin-flip processes caused by the s-f exchange interaction between electron and dimer spins lead to the Fano resonance effects. An…

The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…

Giant or tunneling magnetoresistance are physical phenomena used for reading information in commercial spintronic devices. The effects rely on a conserved spin current passing between a reference and a sensing ferromagnetic electrode in a…

The electronic origin of a large resistance change in nanoscale junctions incorporating spin crossover molecules is demonstrated theoretically by using a combination of density functional theory and the non-equilibrium Green's functions…

The giant magnetoresistance with a huge hysteresis is observed in the organic metal k-(BEDTTTF)2Hg(SCN)2Br at low temperature in a pressure interval around 3 kbar of a width ~1 kbar. The hysteretic magnetoresistance is isotropic with…

By use of first-principles electronic structure calculations, we predict that the magnetoresistance of the bcc Co(100)/MgO(100)/bcc Co(100) and FeCo(100)/MgO(100)/FeCo(100) tunneling junctions can be several times larger than the very large…

We examine transport properties of a magnetic superlattice with current perpendicular to the planes. In the limit that the phase-breaking and spin flip scattering lengths are greater than the system size, a multiple-scattering approach is…

A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between a ferroelectric barrier and magnetic La1-xSrxMnO3 electrode. Using…

The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also…

The magnon current holds substantial importance in facilitating the transfer of angular momentum in spin-based electronics. However, the magnon current in three-dimensional magnetic materials remains orders of magnitude too small for…

Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down…

In the recent experiments the unusual oscillatory magnetoresistance in superconductors was discovered with a periodicity essentially independent on magnetic field direction and even material parameters. The nearly universal period points to…

We calculate the semiclassical magnetoresistivity $\rho_{xx}(B)$ of non-interacting fermions in two dimensions moving in a weak and smoothly varying random potential or random magnetic field. We demonstrate that in a broad range of magnetic…

Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin film structures composed of alternating ferromagnetic and nonmagnetic layers. The effect manifests itself as a significant decrease (typically…

Superconductors used in magnet technology could carry extreme currents because of their ability to keep the magnetic flux motionless. The dynamics of the magnetic flux interaction with superconductors is controlled by this property. The…

We study the giant magnetoresistance of nanogranular magnets in the presence of an external magnetic field and finite temperature. We show that the magnetization of arrays of nanogranular magnets has hysteretic behaviour at low temperatures…

We observe a strong negative magnetoresistance at non-quantizing magnetic fields in a high-mobility two-dimensional electron gas (2DEG). This strong negative magnetoresistance consists of a narrow peak around zero magnetic field and a huge…

Because of spin-orbit interaction, an electrical current is accompanied by a spin current resulting in spin accumulation near the sample edges. Due again to spin-orbit interaction this causes a small decrease of the sample resistance. An…